Transistors - JFET

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Voltage-Breakdown(V(BR)GSS) DraintoSourceVoltage(Vdss) Current-Drain(Idss)@Vds(Vgs=0) CurrentDrain(Id)-Max Voltage-Cutoff(VGSoff)@Id InputCapacitance(Ciss)(Max)@Vds Resistance-RDS(On) Power-Max OperatingTemperature MountingType
IJW120R070T1FKSA1

IJW120R070T1FKSA1

IJW120R070 - POWER FIELD-EFFECT

Infineon Technologies
418 -

RFQ

IJW120R070T1FKSA1

Fiche technique

Bulk * Active - - - - - - - - - - -
IJW120R070T1FKSA1

IJW120R070T1FKSA1

JFET N-CHAN 35A TO247-3

Infineon Technologies
3,076 -

RFQ

IJW120R070T1FKSA1

Fiche technique

Tube CoolSiC™ Obsolete N-Channel 1.2 V 1.2 V 3.3 µA @ 1.2 V 35 A - 2000pF @ 19.5V (VGS) 70 mOhms 238 W -55°C ~ 175°C (TJ) Through Hole
IJW120R100T1FKSA1

IJW120R100T1FKSA1

JFET N-CHAN 26A TO247-3

Infineon Technologies
2,525 -

RFQ

IJW120R100T1FKSA1

Fiche technique

Tube,Tube CoolSiC™ Obsolete N-Channel 1.2 V 1.2 V 1.5 µA @ 1.2 V 26 A - 1550pF @ 19.5V (VGS) 100 mOhms 190 W -55°C ~ 175°C (TJ) Through Hole
IJW120R070T1FKSA1

IJW120R070T1FKSA1

IJW120R070 - POWER FIELD-EFFECT

Infineon Technologies
418 -

RFQ

IJW120R070T1FKSA1

Fiche technique

Bulk * Active - - - - - - - - - - -
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

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