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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N1188 DIODE GEN PURP 400V 35A DO5 GeneSiC Semiconductor	2,072	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1190R DIODE GEN PURP REV 600V 35A DO5 GeneSiC Semiconductor	3,210	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3768 DIODE GEN PURP 1KV 35A DO5 GeneSiC Semiconductor	2,495	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1000 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
FR6GR05 DIODE GEN PURP REV 400V 16A DO4 GeneSiC Semiconductor	2,019	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	500 ns	25 µA @ 50 V	400 V	16A	-65°C ~ 150°C	1.4 V @ 6 A
1N1183 DIODE GEN PURP 50V 35A DO203AB GeneSiC Semiconductor	3,493	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	50 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
FR70G02 DIODE GEN PURP 400V 70A DO5 GeneSiC Semiconductor	3,310	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 100 V	400 V	70A	-40°C ~ 125°C	1.4 V @ 70 A
1N1183R DIODE GEN PURP REV 50V 35A DO5 GeneSiC Semiconductor	3,084	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	50 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1186 DIODE GEN PURP 200V 35A DO5 GeneSiC Semiconductor	2,746	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	200 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1186R DIODE GEN PURP REV 200V 35A DO5 GeneSiC Semiconductor	2,291	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	200 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1187 DIODE GEN PURP 300V 35A DO5 GeneSiC Semiconductor	2,638	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	300 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1187R DIODE GEN PURP REV 300V 35A DO5 GeneSiC Semiconductor	2,063	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	300 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1189 DIODE GEN PURP 600V 35A DO5 GeneSiC Semiconductor	3,735	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N1189R DIODE GEN PURP REV 600V 35A DO5 GeneSiC Semiconductor	2,163	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3765 DIODE GEN PURP 700V 35A DO5 GeneSiC Semiconductor	3,859	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	700 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3765R DIODE GEN PURP REV 700V 35A DO5 GeneSiC Semiconductor	2,399	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	700 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3766 DIODE GEN PURP 800V 35A DO5 GeneSiC Semiconductor	2,174	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3766R DIODE GEN PURP REV 800V 35A DO5 GeneSiC Semiconductor	3,757	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3767 DIODE GEN PURP 900V 35A DO5 GeneSiC Semiconductor	3,728	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	900 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
1N3767R DIODE GEN PURP REV 900V 35A DO5 GeneSiC Semiconductor	3,409	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	900 V	35A	-65°C ~ 190°C	1.2 V @ 35 A
FR12B02 DIODE GEN PURP 100V 12A DO4 GeneSiC Semiconductor	3,507	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 100 V	100 V	12A	-65°C ~ 150°C	800 mV @ 12 A