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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N1200AR DIODE GEN PURP REV 100V 12A DO4 GeneSiC Semiconductor	2,831	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	100 V	12A	-65°C ~ 200°C	1.1 V @ 12 A
1N1202A DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor	3,672	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	200 V	12A	-65°C ~ 200°C	1.1 V @ 12 A
1N1204A DIODE GEN PURP 400V 12A DO4 GeneSiC Semiconductor	2,285	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	12A	-65°C ~ 200°C	1.1 V @ 12 A
1N1204AR DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor	2,374	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	12A	-65°C ~ 200°C	1.1 V @ 12 A
1N3671A DIODE GEN PURP 800V 12A DO4 GeneSiC Semiconductor	2,537	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	12A	-65°C ~ 200°C	1.1 V @ 12 A
S12BR DIODE GEN PURP REV 100V 12A DO4 GeneSiC Semiconductor	2,835	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	100 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12D DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor	3,039	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	200 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12DR DIODE GEN PURP REV 200V 12A DO4 GeneSiC Semiconductor	2,220	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	200 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12G DIODE GEN PURP 400V 12A DO4 GeneSiC Semiconductor	2,822	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12GR DIODE GEN PURP REV 400V 12A DO4 GeneSiC Semiconductor	3,640	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	400 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12J DIODE GEN PURP 600V 12A DO4 GeneSiC Semiconductor	3,758	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12JR DIODE GEN PURP REV 600V 12A DO4 GeneSiC Semiconductor	2,643	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	600 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12K DIODE GEN PURP 800V 12A DO4 GeneSiC Semiconductor	2,390	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12KR DIODE GEN PURP REV 800V 12A DO4 GeneSiC Semiconductor	3,622	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	800 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12M DIODE GEN PURP 1000V 12A DO4 GeneSiC Semiconductor	3,318	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1000 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12MR DIODE GEN PURP REV 1KV 12A DO4 GeneSiC Semiconductor	3,677	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1000 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12Q DIODE GEN PURP 1200V 12A DO4 GeneSiC Semiconductor	3,134	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1200 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
S12QR DIODE GEN PURP REV 1.2KV 12A DO4 GeneSiC Semiconductor	2,452	-	RFQ	Fiche technique	Bulk	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	10 µA @ 50 V	1200 V	12A	-65°C ~ 175°C	1.1 V @ 12 A
1N3890R DIODE GEN PURP REV 100V 12A DO4 GeneSiC Semiconductor	3,415	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	100 V	12A	-65°C ~ 150°C	1.4 V @ 12 A
1N3891R DIODE GEN PURP REV 200V 12A DO4 GeneSiC Semiconductor	2,144	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	200 ns	25 µA @ 50 V	200 V	12A	-65°C ~ 150°C	1.4 V @ 12 A