Mémoire

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus MemoryType MemoryFormat Technology MemorySize MemoryInterface ClockFrequency WriteCycleTime-WordPage AccessTime Voltage-Supply OperatingTemperature MountingType
HM4-6514-8

HM4-6514-8

1024 X 4 CMOS RAM

Harris Corporation
3,909 -

RFQ

HM4-6514-8

Fiche technique

Bulk * Active - - - - - - - - - - -
8102402VA

8102402VA

1024 X 4 CMOS RAM

Harris Corporation
3,407 -

RFQ

8102402VA

Fiche technique

Bulk - Active Volatile SRAM SRAM - Synchronous 4Kb (1K x 4) Parallel - 170ns 120 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
IM6654MJG/883B

IM6654MJG/883B

4096-BIT CMOS UV EPROM

Harris Corporation
3,200 -

RFQ

IM6654MJG/883B

Fiche technique

Bulk - Active Non-Volatile EPROM EPROM - UV 4Kb (512 x 8) Parallel - - 600 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Through Hole
MWS5101EL2X

MWS5101EL2X

256X4-BIT STANDARD SRAM

Harris Corporation
2,678 -

RFQ

MWS5101EL2X

Fiche technique

Bulk - Active Volatile SRAM SRAM - Synchronous 1Kb (256 x 4) Parallel - 300ns 250 ns 4V ~ 6.5V 0°C ~ 70°C (TA) Through Hole
CDP1824CD

CDP1824CD

32-WORD X 8-BIT SRAM

Harris Corporation
2,239 -

RFQ

CDP1824CD

Fiche technique

Bulk - Active Volatile SRAM SRAM - Asynchronous 256b (32 x 8) Parallel - - 710 ns 4V ~ 6.5V -40°C ~ 85°C (TA) Through Hole
MWS5101DL3X

MWS5101DL3X

256X4-BIT STANDARD SRAM

Harris Corporation
3,445 -

RFQ

Bulk * Active - - - - - - - - - - -
CDM5114CD3

CDM5114CD3

1024-WORD X 4-BIT SRAM

Harris Corporation
3,041 -

RFQ

CDM5114CD3

Fiche technique

Bulk * Active - - - - - - - - - - -
CDP1823EX

CDP1823EX

128 X 8 STANDARD SRAM

Harris Corporation
2,839 -

RFQ

CDP1823EX

Fiche technique

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Kb (128 x 8) Parallel - 225ns 250 ns 4V ~ 10.5V -40°C ~ 85°C (TA) Through Hole
MWS5101AEL2

MWS5101AEL2

256X4-BIT STANDARD SRAM

Harris Corporation
2,659 -

RFQ

MWS5101AEL2

Fiche technique

Bulk - Active Volatile SRAM SRAM - Asynchronous 1Kb (256 x 4) Parallel - 300ns 250 ns 4.5V ~ 5.5V 0°C ~ 70°C (TA) Through Hole
CDP18U42CD

CDP18U42CD

256-WORD X 8 STATIC EPROM

Harris Corporation
2,754 -

RFQ

CDP18U42CD

Fiche technique

Bulk * Active - - - - - - - - - - -
CDAC374M96

CDAC374M96

CDAC374M96

Harris Corporation
2,729 -

RFQ

Bulk * Active - - - - - - - - - - -
HM1-6514-9X136

HM1-6514-9X136

1024 X 4 CMOS STATIC RAM

Harris Corporation
2,457 -

RFQ

Bulk * Active - - - - - - - - - - -
CDP1824CDX

CDP1824CDX

32-WORD X 8-BIT SRAM

Harris Corporation
3,258 -

RFQ

CDP1824CDX

Fiche technique

Bulk - Active Volatile SRAM SRAM - Asynchronous 256b (32 x 8) Parallel - - 710 ns 4V ~ 6.5V -40°C ~ 85°C (TA) Through Hole
HM4-6617B-9

HM4-6617B-9

2K X 8 CMOS PROM

Harris Corporation
2,841 -

RFQ

HM4-6617B-9

Fiche technique

Bulk - Active Non-Volatile PROM - 16Kb (2K x 8) Parallel - - 105 ns 4.5V ~ 5.5V -55°C ~ 125°C (TA) Surface Mount
HM1-65162B-9

HM1-65162B-9

STANDARD SRAM, 2KX8, 70NS

Harris Corporation
2,550 -

RFQ

HM1-65162B-9

Fiche technique

Bulk * Active - - - - - - - - - - -
Total 95 Record«Prev12345Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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