Optoisolateurs - Transistor, sortie photovoltaïque

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus NumberofChannels Voltage-Isolation CurrentTransferRatio(Min) CurrentTransferRatio(Max) TurnOn/TurnOffTime(Typ) Rise/FallTime(Typ) InputType OutputType Voltage-Output(Max) Current-Output/Channel Voltage-Forward(Vf)(Typ) Current-DCForward(If)(Max) VceSaturation(Max) OperatingTemperature MountingType
H11AV2M

H11AV2M

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
2,960 -

RFQ

H11AV2M

Fiche technique

Tube - Obsolete 1 7500Vpk 50% @ 10mA - 15µs, 15µs - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Through Hole
H11AV2SM

H11AV2SM

OPTOISO 7.5KV TRANS W/BASE 6SMD

onsemi
3,789 -

RFQ

H11AV2SM

Fiche technique

Tube - Obsolete 1 7500Vpk 50% @ 10mA - 15µs, 15µs - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AV2SR2M

H11AV2SR2M

OPTOISO 7.5KV TRANS W/BASE 6SMD

onsemi
2,065 -

RFQ

H11AV2SR2M

Fiche technique

Tape & Reel (TR) - Obsolete 1 7500Vpk 50% @ 10mA - 15µs, 15µs - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AV2SR2VM

H11AV2SR2VM

OPTOISO 7.5KV TRANS W/BASE 6SMD

onsemi
2,957 -

RFQ

H11AV2SR2VM

Fiche technique

Tape & Reel (TR) - Obsolete 1 7500Vpk 50% @ 10mA - 15µs, 15µs - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AV2SVM

H11AV2SVM

OPTOISO 7.5KV TRANS W/BASE 6SMD

onsemi
2,591 -

RFQ

H11AV2SVM

Fiche technique

Tube - Obsolete 1 7500Vpk 50% @ 10mA - 15µs, 15µs - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Surface Mount
H11AV2TM

H11AV2TM

OPTOCOUPLER WIDE CMOS INV 6DIP

onsemi
2,084 -

RFQ

H11AV2TM

Fiche technique

Tube - Obsolete 1 7500Vpk 50% @ 10mA - - - DC Transistor with Base 70V - - 60 mA 400mV - Through Hole
H11AV2VM

H11AV2VM

OPTOISO 7.5KV TRANS W/BASE 6DIP

onsemi
2,647 -

RFQ

H11AV2VM

Fiche technique

Tube - Obsolete 1 7500Vpk 50% @ 10mA - 15µs, 15µs - DC Transistor with Base 70V - 1.18V 60 mA 400mV -40°C ~ 100°C Through Hole
H11B13S

H11B13S

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
2,984 -

RFQ

H11B13S

Fiche technique

Bag - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Surface Mount
H11B13SD

H11B13SD

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
2,977 -

RFQ

H11B13SD

Fiche technique

Tape & Reel (TR) - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Surface Mount
H11B1S

H11B1S

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
3,932 -

RFQ

H11B1S

Fiche technique

Bag - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Surface Mount
H11B1SD

H11B1SD

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
2,731 -

RFQ

H11B1SD

Fiche technique

Tape & Reel (TR) - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Surface Mount
H11B1W

H11B1W

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,857 -

RFQ

H11B1W

Fiche technique

Tube - Obsolete 1 5300Vrms 500% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11B2300

H11B2300

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,094 -

RFQ

H11B2300

Fiche technique

Tube - Obsolete 1 5300Vrms 200% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11B2300W

H11B2300W

OPTOISO 5.3KV DARL W/BASE 6DIP

onsemi
3,899 -

RFQ

H11B2300W

Fiche technique

Tube - Obsolete 1 5300Vrms 200% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Through Hole
H11D23S

H11D23S

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
2,212 -

RFQ

H11D23S

Fiche technique

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Surface Mount
H11D23SD

H11D23SD

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
3,364 -

RFQ

H11D23SD

Fiche technique

Tape & Reel (TR) - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Surface Mount
H11D2S

H11D2S

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
2,183 -

RFQ

H11D2S

Fiche technique

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Surface Mount
H11D2SD

H11D2SD

OPTOISO 5.3KV TRANS W/BASE 6SMD

onsemi
2,823 -

RFQ

H11D2SD

Fiche technique

Tape & Reel (TR) - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Surface Mount
H11D2W

H11D2W

OPTOISO 5.3KV TRANS W/BASE 6DIP

onsemi
3,568 -

RFQ

H11D2W

Fiche technique

Tube - Obsolete 1 5300Vrms 20% @ 10mA - 5µs, 5µs - DC Transistor with Base 300V 100mA 1.15V 80 mA 400mV -55°C ~ 100°C Through Hole
H11B23S

H11B23S

OPTOISO 5.3KV DARL W/BASE 6SMD

onsemi
3,371 -

RFQ

H11B23S

Fiche technique

Tube - Obsolete 1 5300Vrms 200% @ 1mA - 25µs, 18µs - DC Darlington with Base 25V - 1.2V 100 mA 1V -55°C ~ 100°C Surface Mount
Total 2212 Record«Prev1... 5556575859606162...111Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur