Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRLI640G

IRLI640G

MOSFET N-CH 200V 9.9A TO220-3

Vishay Siliconix
3,470 -

RFQ

IRLI640G

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9.9A (Tc) 4V, 5V 180mOhm @ 5.9A, 5V 2V @ 250µA 66 nC @ 10 V ±10V 1800 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLIZ44G

IRLIZ44G

MOSFET N-CH 60V 30A TO220-3

Vishay Siliconix
3,831 -

RFQ

IRLIZ44G

Fiche technique

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 4V, 5V 28mOhm @ 18A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLL014

IRLL014

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
2,744 -

RFQ

IRLL014

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 4V, 5V 200mOhm @ 1.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL014TR

IRLL014TR

MOSFET N-CH 60V 2.7A SOT223

Vishay Siliconix
3,832 -

RFQ

IRLL014TR

Fiche technique

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 2.7A (Tc) 4V, 5V 200mOhm @ 1.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL110

IRLL110

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
2,451 -

RFQ

IRLL110

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLL110TR

IRLL110TR

MOSFET N-CH 100V 1.5A SOT223

Vishay Siliconix
2,761 -

RFQ

IRLL110TR

Fiche technique

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.5A (Tc) 4V, 5V 540mOhm @ 900mA, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR014

IRLR014

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
2,449 -

RFQ

IRLR014

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR014TR

IRLR014TR

MOSFET N-CH 60V 7.7A DPAK

Vishay Siliconix
3,966 -

RFQ

IRLR014TR

Fiche technique

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR024

IRLR024

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
2,480 -

RFQ

IRLR024

Fiche technique

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR024TR

IRLR024TR

MOSFET N-CH 60V 14A DPAK

Vishay Siliconix
2,503 -

RFQ

IRLR024TR

Fiche technique

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 60 V 14A (Tc) 4V, 5V 100mOhm @ 8.4A, 5V 2V @ 250µA 18 nC @ 5 V ±10V 870 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR110

IRLR110

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
3,073 -

RFQ

IRLR110

Fiche technique

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR110TR

IRLR110TR

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
3,859 -

RFQ

IRLR110TR

Fiche technique

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR110TRL

IRLR110TRL

MOSFET N-CH 100V 4.3A DPAK

Vishay Siliconix
2,077 -

RFQ

IRLR110TRL

Fiche technique

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 4.3A (Tc) 4V, 5V 540mOhm @ 2.6A, 5V 2V @ 250µA 6.1 nC @ 5 V ±10V 250 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR120

IRLR120

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
2,806 -

RFQ

IRLR120

Fiche technique

Tube - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLR120TR

IRLR120TR

MOSFET N-CH 100V 7.7A DPAK

Vishay Siliconix
3,800 -

RFQ

IRLR120TR

Fiche technique

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Tc) 4V, 5V 270mOhm @ 4.6A, 5V 2V @ 250µA 12 nC @ 5 V ±10V 490 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLU014

IRLU014

MOSFET N-CH 60V 7.7A TO251AA

Vishay Siliconix
3,830 -

RFQ

IRLU014

Fiche technique

Tube - Active N-Channel MOSFET (Metal Oxide) 60 V 7.7A (Tc) 4V, 5V 200mOhm @ 4.6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRLZ14L

IRLZ14L

MOSFET N-CH 60V 10A TO262-3

Vishay Siliconix
2,366 -

RFQ

IRLZ14L

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ14S

IRLZ14S

MOSFET N-CH 60V 10A D2PAK

Vishay Siliconix
2,478 -

RFQ

IRLZ14S

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 10A (Tc) 4V, 5V 200mOhm @ 6A, 5V 2V @ 250µA 8.4 nC @ 5 V ±10V 400 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLZ44

IRLZ44

MOSFET N-CH 60V 50A TO220AB

Vishay Siliconix
3,294 -

RFQ

IRLZ44

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLZ44S

IRLZ44S

MOSFET N-CH 60V 50A D2PAK

Vishay Siliconix
2,939 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4V, 5V 28mOhm @ 31A, 5V 2V @ 250µA 66 nC @ 5 V ±10V 3300 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
Total 4747 Record«Prev1... 231232233234235236237238Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur