Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR9110TRL

IRFR9110TRL

MOSFET P-CH 100V 3.1A DPAK

Vishay Siliconix
2,221 -

RFQ

IRFR9110TRL

Fiche technique

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 3.1A (Tc) 10V 1.2Ohm @ 1.9A, 10V 4V @ 250µA 8.7 nC @ 10 V ±20V 200 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9120TR

IRFR9120TR

MOSFET P-CH 100V 5.6A DPAK

Vishay Siliconix
2,288 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9120TRL

IRFR9120TRL

MOSFET P-CH 100V 5.6A DPAK

Vishay Siliconix
2,777 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 5.6A (Tc) 10V 600mOhm @ 3.4A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 390 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR310

IRFR310

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
3,020 -

RFQ

IRFR310

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR310TR

IRFR310TR

MOSFET N-CH 400V 1.7A DPAK

Vishay Siliconix
2,768 -

RFQ

IRFR310TR

Fiche technique

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Tc) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320

IRFR320

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
2,782 -

RFQ

IRFR320

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR320TR

IRFR320TR

MOSFET N-CH 400V 3.1A DPAK

Vishay Siliconix
3,605 -

RFQ

IRFR320TR

Fiche technique

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) 10V 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
94-4737

94-4737

MOSFET N-CH 30V 33A DPAK

Infineon Technologies
3,678 -

RFQ

94-4737

Fiche technique

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3303TR

IRFR3303TR

MOSFET N-CH 30V 33A DPAK

Infineon Technologies
3,578 -

RFQ

IRFR3303TR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3910TRL

IRFR3910TRL

MOSFET N-CH 100V 16A DPAK

Infineon Technologies
2,853 -

RFQ

IRFR3910TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR420

IRFR420

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
3,533 -

RFQ

IRFR420

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR420TR

IRFR420TR

MOSFET N-CH 500V 2.4A DPAK

Vishay Siliconix
3,106 -

RFQ

IRFR420TR

Fiche technique

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 500 V 2.4A (Tc) 10V 3Ohm @ 1.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 360 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5505

IRFR5505

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,932 -

RFQ

IRFR5505

Fiche technique

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9010TR

IRFR9010TR

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,342 -

RFQ

IRFR9010TR

Fiche technique

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9010

IRFR9010

MOSFET P-CH 50V 5.3A DPAK

Vishay Siliconix
3,913 -

RFQ

IRFR9010

Fiche technique

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 5.3A (Tc) 10V 500mOhm @ 2.8A, 10V 4V @ 250µA 9.1 nC @ 10 V ±20V 240 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014

IRFR9014

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
3,541 -

RFQ

IRFR9014

Fiche technique

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014TR

IRFR9014TR

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
3,964 -

RFQ

IRFR9014TR

Fiche technique

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9014TRL

IRFR9014TRL

MOSFET P-CH 60V 5.1A DPAK

Vishay Siliconix
3,196 -

RFQ

IRFR9014TRL

Fiche technique

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.1A (Tc) 10V 500mOhm @ 3.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 2.5W (Ta), 25W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9020

IRFR9020

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
2,087 -

RFQ

IRFR9020

Fiche technique

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR9020TR

IRFR9020TR

MOSFET P-CH 50V 9.9A DPAK

Vishay Siliconix
2,849 -

RFQ

IRFR9020TR

Fiche technique

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 50 V 9.9A (Tc) 10V 280mOhm @ 5.7A, 10V 4V @ 250µA 14 nC @ 10 V ±20V 490 pF @ 25 V - 42W (Tc) -55°C ~ 150°C (TJ) Surface Mount
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur