Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF7476

IRF7476

MOSFET N-CH 12V 15A 8SO

Infineon Technologies
3,880 -

RFQ

IRF7476

Fiche technique

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 12 V 15A (Ta) 2.8V, 4.5V 8mOhm @ 15A, 4.5V 1.9V @ 250µA 40 nC @ 4.5 V ±12V 2550 pF @ 6 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUZ30A

BUZ30A

MOSFET N-CH 200V 21A TO220-3

Infineon Technologies
3,014 -

RFQ

BUZ30A

Fiche technique

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ73

BUZ73

MOSFET N-CH 200V 7A TO220-3

Infineon Technologies
3,653 -

RFQ

BUZ73

Fiche technique

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 7A (Tc) 10V 400mOhm @ 4.5A, 10V 4V @ 1mA - ±20V 530 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ80A

BUZ80A

MOSFET N-CH 800V 3.6A TO220AB

Infineon Technologies
3,220 -

RFQ

BUZ80A

Fiche technique

Tube SIPMOS® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 800 V 3.6A (Tc) 10V 3Ohm @ 2A, 10V 4V @ 1mA - ±20V 1350 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP03N60S5HKSA1

SPP03N60S5HKSA1

MOSFET N-CH 600V 3.2A TO220-3

Infineon Technologies
3,142 -

RFQ

SPP03N60S5HKSA1

Fiche technique

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.2A (Tc) 10V 1.4Ohm @ 2A, 10V 5.5V @ 135µA 16 nC @ 10 V ±20V 420 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP07N60S5

SPP07N60S5

MOSFET N-CH 650V 7.3A TO220-3

Infineon Technologies
2,051 -

RFQ

SPP07N60S5

Fiche technique

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 7.3A (Tc) 10V 600mOhm @ 4.6A, 10V 5.5V @ 350µA 35 nC @ 10 V ±20V 970 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP08P06PBKSA1

SPP08P06PBKSA1

MOSFET P-CH 60V 8.8A TO220-3

Infineon Technologies
2,830 -

RFQ

SPP08P06PBKSA1

Fiche technique

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 8.8A (Tc) 10V 300mOhm @ 6.2A, 10V 4V @ 250µA 15 nC @ 10 V ±20V 420 pF @ 25 V - 42W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPP11N60S5HKSA1

SPP11N60S5HKSA1

MOSFET N-CH 650V 11A TO220-3

Infineon Technologies
3,995 -

RFQ

SPP11N60S5HKSA1

Fiche technique

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 5.5V @ 500µA 54 nC @ 10 V ±20V 1460 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPP18P06PHKSA1

SPP18P06PHKSA1

MOSFET P-CH 60V 18.7A TO220-3

Infineon Technologies
3,484 -

RFQ

SPP18P06PHKSA1

Fiche technique

Tube SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18.7A (Ta) 10V 130mOhm @ 13.2A, 10V 4V @ 1mA 28 nC @ 10 V ±20V 860 pF @ 25 V - 81.1W (Ta) -55°C ~ 175°C (TJ) Through Hole
SPP20N60S5

SPP20N60S5

MOSFET N-CH 650V 20A TO220-3

Infineon Technologies
3,438 -

RFQ

SPP20N60S5

Fiche technique

Tube CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 20A (Tc) 10V 190mOhm @ 13A, 10V 5.5V @ 1mA 103 nC @ 10 V ±20V 3000 pF @ 25 V - 208W (Tc) -55°C ~ 150°C (TJ) Through Hole
BSS119E6327

BSS119E6327

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
2,735 -

RFQ

BSS119E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 2.3V @ 50µA 2.5 nC @ 10 V ±20V 78 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP123L6327HTSA1

BSP123L6327HTSA1

MOSFET N-CH 100V 370MA SOT223-4

Infineon Technologies
3,363 -

RFQ

BSP123L6327HTSA1

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 370mA (Ta) 2.8V, 10V 6Ohm @ 370mA, 10V 1.8V @ 50µA 2.4 nC @ 10 V ±20V 70 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP129E6327

BSP129E6327

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
2,609 -

RFQ

BSP129E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 0V, 10V 6Ohm @ 350mA, 10V 1V @ 108µA 5.7 nC @ 5 V ±20V 108 pF @ 25 V Depletion Mode 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP295E6327

BSP295E6327

MOSFET N-CH 60V 1.8A SOT223-4

Infineon Technologies
2,955 -

RFQ

BSP295E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.8A (Ta) 4.5V, 10V 300mOhm @ 1.8A, 10V 1.8V @ 400µA 17 nC @ 10 V ±20V 368 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP296E6327

BSP296E6327

MOSFET N-CH 100V 1.1A SOT223-4

Infineon Technologies
2,949 -

RFQ

BSP296E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 1.1A (Ta) 4.5V, 10V 700mOhm @ 1.1A, 10V 1.8V @ 400µA 17.2 nC @ 10 V ±20V 364 pF @ 25 V - 1.79W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP315P-E6327

BSP315P-E6327

MOSFET P-CH 60V 1.17A SOT223-4

Infineon Technologies
3,881 -

RFQ

BSP315P-E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 1.17A (Ta) 4.5V, 10V 800mOhm @ 1.17A, 10V 2V @ 160µA 7.8 nC @ 10 V ±20V 160 pF @ 25 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP88E6327

BSP88E6327

MOSFET N-CH 240V 350MA SOT223-4

Infineon Technologies
263,394 -

RFQ

BSP88E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT),Bulk SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 350mA (Ta) 2.8V, 4.5V 6Ohm @ 350mA, 10V 1.4V @ 108µA 6.8 nC @ 10 V ±20V 95 pF @ 25 V - 1.7W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS123E6327

BSS123E6327

MOSFET N-CH 100V 170MA SOT23-3

Infineon Technologies
2,557 -

RFQ

BSS123E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 170mA (Ta) 4.5V, 10V 6Ohm @ 170mA, 10V 1.8V @ 50µA 2.67 nC @ 10 V ±20V 69 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS131E6327

BSS131E6327

MOSFET N-CH 240V 110MA SOT23-3

Infineon Technologies
3,140 -

RFQ

BSS131E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 240 V 110mA (Ta) 4.5V, 10V 14Ohm @ 100mA, 10V 1.8V @ 56µA 3.1 nC @ 10 V ±20V 77 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSS138N-E6327

BSS138N-E6327

MOSFET N-CH 60V 230MA SOT23-3

Infineon Technologies
2,031 -

RFQ

BSS138N-E6327

Fiche technique

Tape & Reel (TR),Cut Tape (CT) SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 230mA (Ta) 4.5V, 10V 3.5Ohm @ 230mA, 10V 1.4V @ 250µA 1.4 nC @ 10 V ±20V 41 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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