Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPP80N06S209

SPP80N06S209

N-CHANNEL POWER MOSFET

Infineon Technologies
894 -

RFQ

SPP80N06S209

Fiche technique

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) 10V 9.1mOhm @ 50A, 10V 4V @ 125µA 80 nC @ 10 V ±20V 3140 pF @ 25 V - 190W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP070N08N3G

IPP070N08N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
609 -

RFQ

IPP070N08N3G

Fiche technique

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 80 V 80A (Tc) 6V, 10V 7mOhm @ 73A, 10V 3.5V @ 73µA 56 nC @ 10 V ±20V 3840 pF @ 40 V - 136W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB80N06SL2-7

SPB80N06SL2-7

N-CHANNEL AUTOMOTIVE MOSFET

Infineon Technologies
600 -

RFQ

SPB80N06SL2-7

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
AUIRF9Z34N-INF

AUIRF9Z34N-INF

AUTOMOTIVE HEXFET P CHANNEL

Infineon Technologies
1,317 -

RFQ

AUIRF9Z34N-INF

Fiche technique

Bulk Automotive, AEC-Q101, HEXFET® Active P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPI80P03P4-05AKSA1

IPI80P03P4-05AKSA1

P-CHANNEL POWER MOSFET

Infineon Technologies
8,248 -

RFQ

Bulk Automotive, AEC-Q101, OptiMOS™ Obsolete P-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 10V 5mOhm @ 80A, 10V 4V @ 253µA 130 nC @ 10 V ±20V 10300 pF @ 25 V - 137W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPAN60R600P7SXKSA1

IPAN60R600P7SXKSA1

MOSFET N-CH 650V 6A TO220

Infineon Technologies
450 -

RFQ

IPAN60R600P7SXKSA1

Fiche technique

Tube CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 600mOhm @ 1.7A, 10V 4V @ 80µA 9 nC @ 10 V ±20V 363 pF @ 400 V - 21W (Tc) -40°C ~ 150°C (TJ) Through Hole
IPP60R520CP

IPP60R520CP

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPP60R520CP

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
BSC029N025SG

BSC029N025SG

N-CHANNEL POWER MOSFET

Infineon Technologies
8,868 -

RFQ

BSC029N025SG

Fiche technique

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 24A (Ta), 100A (Tc) 4.5V, 10V 2.9mOhm @ 50A, 10V 2V @ 80µA 41 nC @ 5 V ±20V 5090 pF @ 15 V - 2.8W (Ta), 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPA08N50C3

SPA08N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
720 -

RFQ

SPA08N50C3

Fiche technique

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP60R600P7

IPP60R600P7

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPP60R600P7

Fiche technique

Bulk - Active - - - - - - - - - - - - - -
IPI052NE7N3G

IPI052NE7N3G

N-CHANNEL POWER MOSFET

Infineon Technologies
396 -

RFQ

IPI052NE7N3G

Fiche technique

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 75 V 80A (Tc) 10V 5.2mOhm @ 80A, 10V 3.8V @ 91µA 68 nC @ 10 V ±20V 4750 pF @ 37.5 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUZ111SL-E3045A

BUZ111SL-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
1,830 -

RFQ

BUZ111SL-E3045A

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 80A - - - - - - - 300W 175°C Surface Mount
IPP50R350CP

IPP50R350CP

COOLMOS 10A, 500V N-CHANNEL

Infineon Technologies
1,500 -

RFQ

IPP50R350CP

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IPB80N03S4L-03ATMA1

IPB80N03S4L-03ATMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
10,000 -

RFQ

IPB80N03S4L-03ATMA1

Fiche technique

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.3mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB80N03S4L03

IPB80N03S4L03

N-CHANNEL POWER MOSFET

Infineon Technologies
2,000 -

RFQ

IPB80N03S4L03

Fiche technique

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 80A (Tc) 4.5V, 10V 3.7mOhm @ 80A, 10V 2.2V @ 45µA 75 nC @ 10 V ±16V 5100 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPB022N04LG

IPB022N04LG

N-CHANNEL POWER MOSFET

Infineon Technologies
1,840 -

RFQ

IPB022N04LG

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IPI100N04S3-03

IPI100N04S3-03

N-CHANNEL POWER MOSFET

Infineon Technologies
722 -

RFQ

IPI100N04S3-03

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
SPI07N65C3

SPI07N65C3

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

SPI07N65C3

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
SPI07N65C3IN

SPI07N65C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
2,868 -

RFQ

SPI07N65C3IN

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IRL1404PBF-INF

IRL1404PBF-INF

MOSFET N-CH 40V 160A TO220AB

Infineon Technologies
4,574 -

RFQ

IRL1404PBF-INF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 160A (Tc) - 4mOhm @ 95A, 10V 3V @ 250µA 140 nC @ 5 V ±20V 6590 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Through Hole
Total 8399 Record«Prev12345678...420Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur