Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFH5301TRPBF

IRFH5301TRPBF

IRFH5301 - 12V-300V N-CHANNEL PO

International Rectifier
2,370 -

RFQ

IRFH5301TRPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 35A (Ta), 100A (Tc) 4.5V, 10V 1.85mOhm @ 50A, 10V 2.35V @ 100µA 77 nC @ 10 V ±20V 5114 pF @ 15 V - 3.6W (Ta), 110W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF332

IRF332

4.5A, 400V, 1.5OHM, N-CHANNEL PO

International Rectifier
3,705 -

RFQ

IRF332

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IRF4104SPBF

IRF4104SPBF

IRF4104 - 12V-300V N-CHANNEL POW

International Rectifier
2,845 -

RFQ

IRF4104SPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF8252PBF

IRF8252PBF

MOSFET N-CH 25V 25A 8SO

International Rectifier
2,626 -

RFQ

IRF8252PBF

Fiche technique

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 25A (Ta) 4.5V, 10V 2.7mOhm @ 25A, 10V 2.35V @ 100µA 53 nC @ 4.5 V ±20V 5305 pF @ 13 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL024NTRPBF

IRFL024NTRPBF

IRFL024 - 12V-300V N-CHANNEL POW

International Rectifier
2,776 -

RFQ

IRFL024NTRPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFR8401TRL

AUIRFR8401TRL

MOSFET N-CH 40V 100A DPAK

International Rectifier
3,469 -

RFQ

AUIRFR8401TRL

Fiche technique

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 10V 4.25mOhm @ 60A, 10V 3.9V @ 50µA 63 nC @ 10 V ±20V 2200 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
AUIRF7805Q

AUIRF7805Q

MOSFET N-CH 30V 13A 8SO

International Rectifier
2,027 -

RFQ

AUIRF7805Q

Fiche technique

Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13A (Ta) 4.5V 11mOhm @ 7A, 4.5V 3V @ 250µA 31 nC @ 5 V ±12V - - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS4127TRL

AUIRFS4127TRL

MOSFET N-CH 200V 72A D2PAK

International Rectifier
3,731 -

RFQ

AUIRFS4127TRL

Fiche technique

Bulk Automotive, AEC-Q101, HEXFET® Active N-Channel MOSFET (Metal Oxide) 200 V 72A (Tc) 10V 22mOhm @ 44A, 10V 5V @ 250µA 150 nC @ 10 V ±20V 5380 pF @ 50 V - 375W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR3710ZTRLPBF

IRFR3710ZTRLPBF

IRFR3710 - 12V-300V N-CHANNEL PO

International Rectifier
3,664 -

RFQ

IRFR3710ZTRLPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 42A (Tc) 10V 18mOhm @ 33A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 2930 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFS7762TRLPBF

IRFS7762TRLPBF

MOSFET N-CH 75V 85A D2PAK

International Rectifier
2,040 -

RFQ

IRFS7762TRLPBF

Fiche technique

Bulk HEXFET®, StrongIRFET™ Active N-Channel MOSFET (Metal Oxide) 75 V 85A (Tc) 6V, 10V 6.7mOhm @ 51A, 10V 3.7V @ 100µA 130 nC @ 10 V ±20V 4440 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF253

IRF253

MOSFET N-CH 150V 25A TO204AE

International Rectifier
3,466 -

RFQ

IRF253

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 25A - - - - - - - 150W - Through Hole
IRFS4321PBF

IRFS4321PBF

MOSFET N-CH 150V 85A D2PAK

International Rectifier
2,048 -

RFQ

IRFS4321PBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 85A (Tc) 10V 15mOhm @ 33A, 10V 5V @ 250µA 110 nC @ 10 V ±30V 4460 pF @ 25 V - 350W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3205STRLPBF

IRF3205STRLPBF

IRF3205 - 12V-300V N-CHANNEL POW

International Rectifier
3,840 -

RFQ

IRF3205STRLPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 110A (Tc) 10V 8mOhm @ 62A, 10V 4V @ 250µA 146 nC @ 10 V ±20V 3247 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLB4132PBF

IRLB4132PBF

IRLB4132 - 12V-300V N-CHANNEL PO

International Rectifier
3,761 -

RFQ

IRLB4132PBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 78A (Tc) 4.5V, 10V 3.5mOhm @ 40A, 10V 2.35V @ 100µA 54 nC @ 4.5 V ±20V 5110 pF @ 15 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
AUIRF2903ZS

AUIRF2903ZS

MOSFET N-CH 30V 160A D2PAK

International Rectifier
3,636 -

RFQ

AUIRF2903ZS

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 160A (Tc) 10V 2.4mOhm @ 75A, 10V 4V @ 150µA 240 nC @ 10 V ±20V 6320 pF @ 25 V - 231W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBA1405PPBF

IRFBA1405PPBF

MOSFET N-CH 55V 174A SUPER-220

International Rectifier
2,897 -

RFQ

IRFBA1405PPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 174A (Tc) 10V 5mOhm @ 101A, 10V 4V @ 250µA 260 nC @ 10 V ±20V 5480 pF @ 25 V - 330W (Tc) -40°C ~ 175°C (TJ) Through Hole
IRFH5053TRPBF

IRFH5053TRPBF

IRFH5053 - 12V-300V N-CHANNEL PO

International Rectifier
3,577 -

RFQ

IRFH5053TRPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 100 V 9.3A (Ta), 46A (Tc) 10V 18mOhm @ 9.3A, 10V 4.9V @ 100µA 36 nC @ 10 V ±20V 1510 pF @ 50 V - 3.1W (Ta), 8.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7607TRPBF

IRF7607TRPBF

IRF7607 - 12V-300V N-CHANNEL POW

International Rectifier
3,196 -

RFQ

IRF7607TRPBF

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 20 V 6.5A (Ta) 2.5V, 4.5V 30mOhm @ 6.5A, 4.5V 1.2V @ 250µA 22 nC @ 5 V ±12V 1310 pF @ 15 V - 1.8W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7809AVTRPBF-1

IRF7809AVTRPBF-1

MOSFET N-CH 30V 13.3A 8SO

International Rectifier
3,248 -

RFQ

IRF7809AVTRPBF-1

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 30 V 13.3A (Ta) 4.5V 9mOhm @ 15A, 4.5V 1V @ 250µA 62 nC @ 5 V ±12V 3780 pF @ 16 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AUIRFS6535

AUIRFS6535

MOSFET N-CH 300V 19A D2PAK

International Rectifier
3,506 -

RFQ

AUIRFS6535

Fiche technique

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 300 V 19A (Tc) 10V 185mOhm @ 11A, 10V 5V @ 150µA 57 nC @ 10 V ±20V 2340 pF @ 25 V - 210W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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