Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RFH30N15

RFH30N15

N-CHANNEL POWER MOSFET

Harris Corporation
1,417 -

RFQ

RFH30N15

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 30A (Tc) 10V 75mOhm @ 15A, 10V 4V @ 1mA - ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFA100N05E

RFA100N05E

N-CHANNEL POWER MOSFET

Harris Corporation
1,544 -

RFQ

RFA100N05E

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 100A (Tc) 10V 8mOhm @ 100A, 10V 4V @ 250µA 230 nC @ 10 V ±20V - - 240W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFG75N05E

RFG75N05E

N-CHANNEL POWER MOSFET

Harris Corporation
18,695 -

RFQ

RFG75N05E

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 75A (Tc) 10V 8mOhm @ 75A, 10V 4V @ 250µA 400 nC @ 20 V ±20V - - 240W (Tc) -55°C ~ 175°C (TJ) Through Hole
2N6792TX

2N6792TX

2A, 400V, 1.8OHM, N-CHANNEL

Harris Corporation
335 -

RFQ

2N6792TX

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 1.8Ohm @ 1.25A, 10V 4V @ 1mA - ±20V 600 pF @ 25 V - 20W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S25N06

RF1S25N06

25A, 60V, 0.047 OHM, N-CHANNEL P

Harris Corporation
2,860 -

RFQ

RF1S25N06

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 25A (Tc) 10V 47mOhm @ 25A, 10V 4V @ 250µA 80 nC @ 20 V ±20V 975 pF @ 25 V - 72W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFP350

IRFP350

MOSFET N-CH 400V 16A TO247-3

Harris Corporation
3,837 -

RFQ

IRFP350

Fiche technique

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 16A (Tc) 10V 300mOhm @ 9.6A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 2600 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFF9130

IRFF9130

6.5A, 100V, 0.3OHM, P-CHANNEL MO

Harris Corporation
3,004 -

RFQ

IRFF9130

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 6.5A (Tc) 10V 300mOhm @ 3A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 500 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFD8P06LE

RFD8P06LE

8A, 60V, 0.33OHM, P-CHANNEL POWE

Harris Corporation
3,211 -

RFQ

RFD8P06LE

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
RF1K4909396

RF1K4909396

RF1K4909396 - POWER FIELD-EFFECT

Harris Corporation
2,109 -

RFQ

RF1K4909396

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
RF1K4909096

RF1K4909096

RF1K4909096 - POWER FIELD-EFFECT

Harris Corporation
2,395 -

RFQ

RF1K4909096

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
RFP40N10LE

RFP40N10LE

40A, 100V, 0.04OHM, N-CHANNEL PO

Harris Corporation
3,960 -

RFQ

RFP40N10LE

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
RF1S9640SM9A

RF1S9640SM9A

11A, 200V, 0.5OHM, P-CHANNEL POW

Harris Corporation
3,435 -

RFQ

RF1S9640SM9A

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
RF1S530SM9A

RF1S530SM9A

14A, 100V, 0.16OHM, N-CHANNEL PO

Harris Corporation
3,791 -

RFQ

RF1S530SM9A

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
HP4936DY

HP4936DY

POWER FIELD-EFFECT TRANSISTOR, 5

Harris Corporation
2,080 -

RFQ

HP4936DY

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
HUF76113T3ST

HUF76113T3ST

4.7 A, 30 V, 0.031 OHM, N-CHANNE

Harris Corporation
2,435 -

RFQ

HUF76113T3ST

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
Total 395 Record«Prev1... 1617181920Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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