Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
2SK3221-AZ

2SK3221-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
17,154 -

RFQ

2SK3221-AZ

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
FS30KMJ-06F#B00

FS30KMJ-06F#B00

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
15,624 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1286-AZ

2SK1286-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
14,033 -

RFQ

2SK1286-AZ

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
NP109N04PUK-E1-AY

NP109N04PUK-E1-AY

MOSFET N-CH 40V 110A TO263

Renesas Electronics America Inc
1,245 -

RFQ

NP109N04PUK-E1-AY

Fiche technique

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 40 V 110A (Tc) 10V 1.75mOhm @ 55A, 10V 4V @ 250µA 189 nC @ 10 V ±20V 10800 pF @ 25 V - 1.8W (Ta), 250W (Tc) 175°C (TJ) Surface Mount
RJK0348DPA-00#J0

RJK0348DPA-00#J0

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
637,500 -

RFQ

Bulk - Active N-Channel MOSFET (Metal Oxide) 30 V 50A (Ta) - 2.5mOhm @ 25A, 10V - 34 nC @ 4.5 V - 5100 pF @ 10 V - 55W (Tc) 150°C (TJ) Surface Mount
UPA2708TP-E1-AZ

UPA2708TP-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
267,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2708GR-E2-A

UPA2708GR-E2-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
92,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
UPA2708GR-E1-AT

UPA2708GR-E1-AT

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
37,500 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
N0434N-S23-AY

N0434N-S23-AY

MOSFET N-CH 40V 100A TO262

Renesas Electronics America Inc
1,490 -

RFQ

N0434N-S23-AY

Fiche technique

Tube - Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Ta) 10V 3.7mOhm @ 50A, 10V - 100 nC @ 10 V ±20V 5550 pF @ 25 V - 1.5W (Ta), 119W (Tc) 150°C (TJ) Through Hole
2SK2462(04)-AZ

2SK2462(04)-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
21,036 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
NP80N04MHE-S18-AY

NP80N04MHE-S18-AY

MOSFET N-CH 40V 80A TO220

Renesas Electronics America Inc
227,950 -

RFQ

NP80N04MHE-S18-AY

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 8mOhm @ 40A, 10V 4V @ 250µA 60 nC @ 10 V - 3300 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C (TJ) Through Hole
NP80N04MLG-S18-AY

NP80N04MLG-S18-AY

MOSFET N-CH 40V 80A TO220

Renesas Electronics America Inc
7,547 -

RFQ

NP80N04MLG-S18-AY

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 4.8mOhm @ 40A, 10V 2.5V @ 250µA 135 nC @ 10 V - 6900 pF @ 25 V - 1.8W (Ta), 115W (Tc) 175°C (TJ) Through Hole
NP80N04NHE-S18-AY

NP80N04NHE-S18-AY

MOSFET N-CH 40V 80A TO262

Renesas Electronics America Inc
2,250 -

RFQ

NP80N04NHE-S18-AY

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) - 8mOhm @ 40A, 10V 4V @ 250µA 60 nC @ 10 V - 3300 pF @ 25 V - 1.8W (Ta), 120W (Tc) 175°C (TJ) Through Hole
RJK0301DPB-00#J0

RJK0301DPB-00#J0

MOSFET N-CH 30V 60A LFPAK

Renesas Electronics America Inc
51,245 -

RFQ

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 60A (Ta) - 2.8mOhm @ 30A, 10V - 32 nC @ 4.5 V - 5000 pF @ 10 V - 65W (Tc) - Surface Mount
2SK3900-ZP-E1-AZ

2SK3900-ZP-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
2,700 -

RFQ

2SK3900-ZP-E1-AZ

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
HAT2165N-EL-E

HAT2165N-EL-E

MOSFET N-CH 30V 55A 8LFPAK

Renesas Electronics America Inc
2,365 -

RFQ

HAT2165N-EL-E

Fiche technique

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 30 V 55A (Ta) - 3.6mOhm @ 27.5A, 10V - 33 nC @ 4.5 V - 5180 pF @ 10 V - 30W (Tc) 150°C (TJ) Surface Mount
2SK3354-Z-E1

2SK3354-Z-E1

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
6,545 -

RFQ

2SK3354-Z-E1

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
2SK1313STR-E

2SK1313STR-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
5,000 -

RFQ

2SK1313STR-E

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
UPA2723T1A-E2-AZ

UPA2723T1A-E2-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
15,000 -

RFQ

UPA2723T1A-E2-AZ

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
UPA2723T1A-E1-AZ

UPA2723T1A-E1-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
9,000 -

RFQ

UPA2723T1A-E1-AZ

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
Total 1496 Record«Prev1... 5960616263646566...75Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur