onsemi FDC658AP-G

Numéro de pièce
FDC658AP-G
Fabricant
onsemi
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
SuperSOT™-6
Fiche technique
FDC658AP-G.pdf
Description
-30V SINGLE P-CHANNEL LOGIC LEVE
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order FDC658AP-G on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that FDC658AP-G is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FDC658AP-G. All suppliers must pass our qualification reviews before they can publish their products including FDC658AP-G on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of FDC658AP-G products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FDC658AP-G price and inventory displayed accurate?

The price and inventory of FDC658AP-G fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FDC658AP-G?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FDC658AP-G we delivered, we will accept the replacement or return of the FDC658AP-G only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FDC658AP-G.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FDC658AP-G pin diagram, FDC658AP-G datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image ECH8411-TL-E IRF530 FSS273-TL-E 2SK3702 FQPF13N50C-ON
Numéro de pièce ECH8411-TL-E IRF530 FSS273-TL-E 2SK3702 FQPF13N50C-ON
Fabricant onsemi onsemi onsemi onsemi onsemi
Packaging Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR) Tape & Reel (TR)
Series - - - - -
ProductStatus Last Time Buy Last Time Buy Last Time Buy Last Time Buy Last Time Buy
FETType P-Channel P-Channel P-Channel P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 4A (Ta) 4A (Ta) 4A (Ta) 4A (Ta) 4A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V 50mOhm @ 4A, 10V
Vgs(th)(Max)@Id 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA 3V @ 250µA
GateCharge(Qg)(Max)@Vgs 8.1 nC @ 5 V 8.1 nC @ 5 V 8.1 nC @ 5 V 8.1 nC @ 5 V 8.1 nC @ 5 V
Vgs(Max) ±25V ±25V ±25V ±25V ±25V
InputCapacitance(Ciss)(Max)@Vds 680 pF @ 15 V 680 pF @ 15 V 680 pF @ 15 V 680 pF @ 15 V 680 pF @ 15 V
FETFeature - - - - -
PowerDissipation(Max) 800mW (Ta) 800mW (Ta) 800mW (Ta) 800mW (Ta) 800mW (Ta)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

FDC658AP-G Informations pertinentes

Inclut les pièces suivantes "FDC658AP-G" ISSI, solutions de silicium intégrées de lentreprise FDC658AP-G.

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