onsemi FQB55N10TM

Numéro de pièce
FQB55N10TM
Fabricant
onsemi
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
D²PAK (TO-263)
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.FQB55N10TM.pdf
Description
MOSFET N-CH 100V 55A D2PAK
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order FQB55N10TM on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that FQB55N10TM is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FQB55N10TM. All suppliers must pass our qualification reviews before they can publish their products including FQB55N10TM on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of FQB55N10TM products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FQB55N10TM price and inventory displayed accurate?

The price and inventory of FQB55N10TM fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FQB55N10TM?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQB55N10TM we delivered, we will accept the replacement or return of the FQB55N10TM only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQB55N10TM.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FQB55N10TM pin diagram, FQB55N10TM datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image FQI7N80TU FQD4N20TM FQP3N30 FQPF19N10 FQD3P50TM
Numéro de pièce FQI7N80TU FQD4N20TM FQP3N30 FQPF19N10 FQD3P50TM
Fabricant onsemi onsemi onsemi onsemi onsemi
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series QFET® QFET® QFET® QFET® QFET®
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V 100 V 100 V 100 V
Current-ContinuousDrain(Id)@25°C 55A (Tc) 55A (Tc) 55A (Tc) 55A (Tc) 55A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 26mOhm @ 27.5A, 10V 26mOhm @ 27.5A, 10V 26mOhm @ 27.5A, 10V 26mOhm @ 27.5A, 10V 26mOhm @ 27.5A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 98 nC @ 10 V 98 nC @ 10 V 98 nC @ 10 V 98 nC @ 10 V 98 nC @ 10 V
Vgs(Max) ±25V ±25V ±25V ±25V ±25V
InputCapacitance(Ciss)(Max)@Vds 2730 pF @ 25 V 2730 pF @ 25 V 2730 pF @ 25 V 2730 pF @ 25 V 2730 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 3.75W (Ta), 155W (Tc) 3.75W (Ta), 155W (Tc) 3.75W (Ta), 155W (Tc) 3.75W (Ta), 155W (Tc) 3.75W (Ta), 155W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

FQB55N10TM Informations pertinentes

Inclut les pièces suivantes "FQB55N10TM" ISSI, solutions de silicium intégrées de lentreprise FQB55N10TM.

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