onsemi FQPF11N40C

Numéro de pièce
FQPF11N40C
Fabricant
onsemi
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
TO-220F-3
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.FQPF11N40C.pdf
Description
POWER FIELD-EFFECT TRANSISTOR, 1
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order FQPF11N40C on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that FQPF11N40C is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the FQPF11N40C. All suppliers must pass our qualification reviews before they can publish their products including FQPF11N40C on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of FQPF11N40C products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the FQPF11N40C price and inventory displayed accurate?

The price and inventory of FQPF11N40C fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of FQPF11N40C?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the FQPF11N40C we delivered, we will accept the replacement or return of the FQPF11N40C only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of FQPF11N40C.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as FQPF11N40C pin diagram, FQPF11N40C datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image FQI7N80TU FQD4N20TM FQP3N30 FQPF19N10 FQD3P50TM
Numéro de pièce FQI7N80TU FQD4N20TM FQP3N30 FQPF19N10 FQD3P50TM
Fabricant onsemi onsemi onsemi onsemi onsemi
Packaging Bulk Bulk Bulk Bulk Bulk
Series QFET® QFET® QFET® QFET® QFET®
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 400 V 400 V 400 V 400 V 400 V
Current-ContinuousDrain(Id)@25°C 10.5A (Tc) 10.5A (Tc) 10.5A (Tc) 10.5A (Tc) 10.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 10V 10V 10V 10V 10V
RdsOn(Max)@IdVgs 530mOhm @ 5.25A, 10V 530mOhm @ 5.25A, 10V 530mOhm @ 5.25A, 10V 530mOhm @ 5.25A, 10V 530mOhm @ 5.25A, 10V
Vgs(th)(Max)@Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
GateCharge(Qg)(Max)@Vgs 35 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V 35 nC @ 10 V
Vgs(Max) ±30V ±30V ±30V ±30V ±30V
InputCapacitance(Ciss)(Max)@Vds 1090 pF @ 25 V 1090 pF @ 25 V 1090 pF @ 25 V 1090 pF @ 25 V 1090 pF @ 25 V
FETFeature - - - - -
PowerDissipation(Max) 44W (Tc) 44W (Tc) 44W (Tc) 44W (Tc) 44W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

FQPF11N40C Informations pertinentes

Inclut les pièces suivantes "FQPF11N40C" ISSI, solutions de silicium intégrées de lentreprise FQPF11N40C.

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