Goford Semiconductor GT52N10T

Numéro de pièce
GT52N10T
Fabricant
Goford Semiconductor
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
TO-220
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.GT52N10T.pdf
Description
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order GT52N10T on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that GT52N10T is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the GT52N10T. All suppliers must pass our qualification reviews before they can publish their products including GT52N10T on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of GT52N10T products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the GT52N10T price and inventory displayed accurate?

The price and inventory of GT52N10T fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of GT52N10T?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GT52N10T we delivered, we will accept the replacement or return of the GT52N10T only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GT52N10T.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as GT52N10T pin diagram, GT52N10T datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image 03N06 5P40 G30N02T GT100N12M GC11N65M
Numéro de pièce 03N06 5P40 G30N02T GT100N12M GC11N65M
Fabricant Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor Goford Semiconductor
Packaging Tube Tube Tube Tube Tube
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V 100 V 100 V 100 V
Current-ContinuousDrain(Id)@25°C 80A 80A 80A 80A 80A
DriveVoltage(MaxRdsOnMinRdsOn) - - - - -
RdsOn(Max)@IdVgs 9mOhm @ 50A, 10V 9mOhm @ 50A, 10V 9mOhm @ 50A, 10V 9mOhm @ 50A, 10V 9mOhm @ 50A, 10V
Vgs(th)(Max)@Id 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA 2.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 44.5 nC @ 10 V 44.5 nC @ 10 V 44.5 nC @ 10 V 44.5 nC @ 10 V 44.5 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 2626 pF @ 50 V 2626 pF @ 50 V 2626 pF @ 50 V 2626 pF @ 50 V 2626 pF @ 50 V
FETFeature - - - - -
PowerDissipation(Max) 227W 227W 227W 227W 227W
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

GT52N10T Informations pertinentes

Inclut les pièces suivantes "GT52N10T" ISSI, solutions de silicium intégrées de lentreprise GT52N10T.

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