onsemi NTHL080N120SC1

Numéro de pièce
NTHL080N120SC1
Fabricant
onsemi
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
TO-247-3
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.NTHL080N120SC1.pdf
Description
SILICON CARBIDE MOSFET, N-CHANNE
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order NTHL080N120SC1 on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that NTHL080N120SC1 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the NTHL080N120SC1. All suppliers must pass our qualification reviews before they can publish their products including NTHL080N120SC1 on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of NTHL080N120SC1 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the NTHL080N120SC1 price and inventory displayed accurate?

The price and inventory of NTHL080N120SC1 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of NTHL080N120SC1?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the NTHL080N120SC1 we delivered, we will accept the replacement or return of the NTHL080N120SC1 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of NTHL080N120SC1.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as NTHL080N120SC1 pin diagram, NTHL080N120SC1 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image ECH8411-TL-E IRF530 FSS273-TL-E 2SK3702 FQPF13N50C-ON
Numéro de pièce ECH8411-TL-E IRF530 FSS273-TL-E 2SK3702 FQPF13N50C-ON
Fabricant onsemi onsemi onsemi onsemi onsemi
Packaging Bulk Bulk Bulk Bulk Bulk
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V 1200 V 1200 V 1200 V 1200 V
Current-ContinuousDrain(Id)@25°C 44A (Tc) 44A (Tc) 44A (Tc) 44A (Tc) 44A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 20V 20V 20V 20V 20V
RdsOn(Max)@IdVgs 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V 110mOhm @ 20A, 20V
Vgs(th)(Max)@Id 4.3V @ 5mA 4.3V @ 5mA 4.3V @ 5mA 4.3V @ 5mA 4.3V @ 5mA
GateCharge(Qg)(Max)@Vgs 56 nC @ 20 V 56 nC @ 20 V 56 nC @ 20 V 56 nC @ 20 V 56 nC @ 20 V
Vgs(Max) +25V, -15V +25V, -15V +25V, -15V +25V, -15V +25V, -15V
InputCapacitance(Ciss)(Max)@Vds 1670 pF @ 800 V 1670 pF @ 800 V 1670 pF @ 800 V 1670 pF @ 800 V 1670 pF @ 800 V
FETFeature - - - - -
PowerDissipation(Max) 348W (Tc) 348W (Tc) 348W (Tc) 348W (Tc) 348W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

NTHL080N120SC1 Informations pertinentes

Inclut les pièces suivantes "NTHL080N120SC1" ISSI, solutions de silicium intégrées de lentreprise NTHL080N120SC1.

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