Rohm Semiconductor RQ3E100BNTB

Numéro de pièce
RQ3E100BNTB
Fabricant
Rohm Semiconductor
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
8-HSMT (3.2x3)
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.RQ3E100BNTB.pdf
Description
MOSFET N-CH 30V 10A 8HSMT
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order RQ3E100BNTB on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that RQ3E100BNTB is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the RQ3E100BNTB. All suppliers must pass our qualification reviews before they can publish their products including RQ3E100BNTB on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of RQ3E100BNTB products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the RQ3E100BNTB price and inventory displayed accurate?

The price and inventory of RQ3E100BNTB fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of RQ3E100BNTB?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the RQ3E100BNTB we delivered, we will accept the replacement or return of the RQ3E100BNTB only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of RQ3E100BNTB.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as RQ3E100BNTB pin diagram, RQ3E100BNTB datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Numéro de pièce R8002ANJGTL R8002KNXC7G RCJ331N25TL RCJ451N20TL RX3G07CGNC16
Fabricant Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor Rohm Semiconductor
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series - - - - -
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 30 V 30 V 30 V 30 V 30 V
Current-ContinuousDrain(Id)@25°C 10A (Ta) 10A (Ta) 10A (Ta) 10A (Ta) 10A (Ta)
DriveVoltage(MaxRdsOnMinRdsOn) 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V 4.5V, 10V
RdsOn(Max)@IdVgs 10.4mOhm @ 10A, 10V 10.4mOhm @ 10A, 10V 10.4mOhm @ 10A, 10V 10.4mOhm @ 10A, 10V 10.4mOhm @ 10A, 10V
Vgs(th)(Max)@Id 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA 2.5V @ 1mA
GateCharge(Qg)(Max)@Vgs 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V 22 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 1100 pF @ 15 V 1100 pF @ 15 V 1100 pF @ 15 V 1100 pF @ 15 V 1100 pF @ 15 V
FETFeature - - - - -
PowerDissipation(Max) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta) 2W (Ta)
OperatingTemperature 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ) 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

RQ3E100BNTB Informations pertinentes

Inclut les pièces suivantes "RQ3E100BNTB" ISSI, solutions de silicium intégrées de lentreprise RQ3E100BNTB.

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