Quelle est la tension de sortie maximale ?

La tension de sortie maximale désigne la zone dynamique au - delà de laquelle la sortie est saturée dans la direction positive ou négative, et est limitée en fonction de la valeur de la résistance de charge.

Quelle est la distance entre bornes ?

La distance centrale d'un pôle à l'autre.

Quelle est la forme des bornes ?

Se produisant à la fin d'une série, d'une succession, etc. ; final ; concluant.

Quelle est la fonction supplémentaire ?

Toute fonction, y compris une fonction existante modifiée, qui n'est pas une fonction existante.

Qu'est - ce que le montage en surface ?

Ayant des bornes conçues pour être soudures sur le côté d'une carte de circuit imprimé sur lequel le corps du composant est monté.

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Vishay Siliconix SIR582DP-T1-RE3

Name: SIR582DP-T1-RE3
Brand: Vishay Siliconix
SKU: SIR582DP-T1-RE3
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Numéro de pièce: SIR582DP-T1-RE3

Fabricant: Vishay Siliconix

Catégorie :: Transistoren – FETs, MOSFETs – Einzeltransistoren

Emballage: PowerPAK® SO-8

Fiche technique: SIR582DP-T1-RE3.pdf

Description: N-CHANNEL 80 V (D-S) MOSFET POWE

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Product details

Packaging:
Tape & Reel (TR),Cut Tape (CT)
Series:
TrenchFET® Gen V
ProductStatus:
Active
FETType:
N-Channel
Technology:
MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss):
80 V
Current-ContinuousDrain(Id)@25°C:
28.9A (Ta), 116A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn):
7.5V, 10V
RdsOn(Max)@IdVgs:
3.4mOhm @ 15A, 10V
Vgs(th)(Max)@Id:
4V @ 250µA
GateCharge(Qg)(Max)@Vgs:
67 nC @ 10 V
Vgs(Max):
±20V
InputCapacitance(Ciss)(Max)@Vds:
3360 pF @ 40 V
FETFeature:
-
PowerDissipation(Max):
5.6W (Ta), 92.5W (Tc)
OperatingTemperature:
-55°C ~ 150°C (TJ)
MountingType:
Surface Mount
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Fiche technique
SIR582DP-T1-RE3.pdf

1. How to order SIR582DP-T1-RE3 on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that SIR582DP-T1-RE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SIR582DP-T1-RE3. All suppliers must pass our qualification reviews before they can publish their products including SIR582DP-T1-RE3 on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of SIR582DP-T1-RE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SIR582DP-T1-RE3 price and inventory displayed accurate?

The price and inventory of SIR582DP-T1-RE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SIR582DP-T1-RE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SIR582DP-T1-RE3 we delivered, we will accept the replacement or return of the SIR582DP-T1-RE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SIR582DP-T1-RE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SIR582DP-T1-RE3 pin diagram, SIR582DP-T1-RE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image
Numéro de pièce	SISS54DN-T1-GE3	SIR500DP-T1-RE3	SISS52DN-T1-GE3	SISH536DN-T1-GE3	SIR588DP-T1-RE3
Fabricant	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix	Vishay Siliconix
Packaging	Tape & Reel (TR),Cut Tape (CT)	Tape & Reel (TR),Cut Tape (CT)	Tape & Reel (TR),Cut Tape (CT)	Tape & Reel (TR),Cut Tape (CT)	Tape & Reel (TR),Cut Tape (CT)
Series	TrenchFET® Gen V	TrenchFET® Gen V	TrenchFET® Gen V	TrenchFET® Gen V	TrenchFET® Gen V
ProductStatus	Active	Active	Active	Active	Active
FETType	N-Channel	N-Channel	N-Channel	N-Channel	N-Channel
Technology	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)	MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss)	80 V	80 V	80 V	80 V	80 V
Current-ContinuousDrain(Id)@25°C	28.9A (Ta), 116A (Tc)	28.9A (Ta), 116A (Tc)	28.9A (Ta), 116A (Tc)	28.9A (Ta), 116A (Tc)	28.9A (Ta), 116A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn)	7.5V, 10V	7.5V, 10V	7.5V, 10V	7.5V, 10V	7.5V, 10V
RdsOn(Max)@IdVgs	3.4mOhm @ 15A, 10V	3.4mOhm @ 15A, 10V	3.4mOhm @ 15A, 10V	3.4mOhm @ 15A, 10V	3.4mOhm @ 15A, 10V
Vgs(th)(Max)@Id	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA	4V @ 250µA
GateCharge(Qg)(Max)@Vgs	67 nC @ 10 V	67 nC @ 10 V	67 nC @ 10 V	67 nC @ 10 V	67 nC @ 10 V
Vgs(Max)	±20V	±20V	±20V	±20V	±20V
InputCapacitance(Ciss)(Max)@Vds	3360 pF @ 40 V	3360 pF @ 40 V	3360 pF @ 40 V	3360 pF @ 40 V	3360 pF @ 40 V
FETFeature	-	-	-	-	-
PowerDissipation(Max)	5.6W (Ta), 92.5W (Tc)	5.6W (Ta), 92.5W (Tc)	5.6W (Ta), 92.5W (Tc)	5.6W (Ta), 92.5W (Tc)	5.6W (Ta), 92.5W (Tc)
OperatingTemperature	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)	-55°C ~ 150°C (TJ)
MountingType	Surface Mount	Surface Mount	Surface Mount	Surface Mount	Surface Mount