Vishay Siliconix SISS40DN-T1-GE3

Numéro de pièce
SISS40DN-T1-GE3
Fabricant
Vishay Siliconix
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
PowerPAK® 1212-8S
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.SISS40DN-T1-GE3.pdf
Description
MOSFET N-CH 100V 36.5A PPAK
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order SISS40DN-T1-GE3 on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that SISS40DN-T1-GE3 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the SISS40DN-T1-GE3. All suppliers must pass our qualification reviews before they can publish their products including SISS40DN-T1-GE3 on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of SISS40DN-T1-GE3 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the SISS40DN-T1-GE3 price and inventory displayed accurate?

The price and inventory of SISS40DN-T1-GE3 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of SISS40DN-T1-GE3?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the SISS40DN-T1-GE3 we delivered, we will accept the replacement or return of the SISS40DN-T1-GE3 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of SISS40DN-T1-GE3.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as SISS40DN-T1-GE3 pin diagram, SISS40DN-T1-GE3 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image SIR624DP-T1-GE3 SUG90090E-GE3 SI7322ADN-T1-GE3 SUD80460E-GE3 SISS98DN-T1-GE3
Numéro de pièce SIR624DP-T1-GE3 SUG90090E-GE3 SI7322ADN-T1-GE3 SUD80460E-GE3 SISS98DN-T1-GE3
Fabricant Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Packaging Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT) Tape & Reel (TR),Cut Tape (CT)
Series ThunderFET® ThunderFET® ThunderFET® ThunderFET® ThunderFET®
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
DraintoSourceVoltage(Vdss) 100 V 100 V 100 V 100 V 100 V
Current-ContinuousDrain(Id)@25°C 36.5A (Tc) 36.5A (Tc) 36.5A (Tc) 36.5A (Tc) 36.5A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 6V, 10V 6V, 10V 6V, 10V 6V, 10V 6V, 10V
RdsOn(Max)@IdVgs 21mOhm @ 10A, 10V 21mOhm @ 10A, 10V 21mOhm @ 10A, 10V 21mOhm @ 10A, 10V 21mOhm @ 10A, 10V
Vgs(th)(Max)@Id 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA 3.5V @ 250µA
GateCharge(Qg)(Max)@Vgs 24 nC @ 10 V 24 nC @ 10 V 24 nC @ 10 V 24 nC @ 10 V 24 nC @ 10 V
Vgs(Max) ±20V ±20V ±20V ±20V ±20V
InputCapacitance(Ciss)(Max)@Vds 845 pF @ 50 V 845 pF @ 50 V 845 pF @ 50 V 845 pF @ 50 V 845 pF @ 50 V
FETFeature - - - - -
PowerDissipation(Max) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc) 3.7W (Ta), 52W (Tc)
OperatingTemperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
MountingType Surface Mount Surface Mount Surface Mount Surface Mount Surface Mount

SISS40DN-T1-GE3 Informations pertinentes

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