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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
WNSC2D201200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,000	-	RFQ	Fiche technique	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	845pF @ 1V, 1MHz	0 ns	200 µA @ 1200 V	1200 V	20A	175°C	1.8 V @ 20 A
BYC15-600,127 DIODE GEN PURP 500V 15A TO220AC WeEn Semiconductors	303	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	200 µA @ 600 V	500 V	15A	150°C (Max)	2.9 V @ 15 A
WND45P16WQ STANDARD POWER DIODE WeEn Semiconductors	2,490	-	RFQ	Fiche technique	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	10 µA @ 1600 V	1600 V	45A	150°C	1.4 V @ 45 A
WNSC2D10650DJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,349	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	310pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	10A	175°C	1.7 V @ 10 A
BYC30X-600PSQ WEEN'S 5TH GENERATION HYPER FAST WeEn Semiconductors	2,830	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	10 µA @ 600 V	600 V	30A	175°C	2.75 V @ 30 A
WND60P16WQ STANDARD POWER DIODE WeEn Semiconductors	2,439	-	RFQ	Fiche technique	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	50 µA @ 1600 V	1600 V	60A	-55°C ~ 150°C	1.12 V @ 60 A
BYV29D-600PJ DIODE GEN PURP 600V 9A DPAK WeEn Semiconductors	2,941	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 600 V	600 V	9A	175°C (Max)	1.3 V @ 8 A
BYC100W-1200PQ BYC100W-1200P/TO247-2L/STANDARD WeEn Semiconductors	3,688	-	RFQ	Fiche technique	Tube	EEPP™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	90 ns	250 µA @ 1200 V	1200 V	100A	175°C (Max)	3.3 V @ 100 A
NXPSC206506Q DIODE SCHOTTKY 650V 20A TO220AC WeEn Semiconductors	4,558	-	RFQ	Fiche technique	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	600pF @ 1V, 1MHz	0 ns	500 µA @ 650 V	650 V	20A	175°C (Max)	1.7 V @ 20 A
MUR560J DIODE GEN PURP 600V 5A SMC WeEn Semiconductors	10,810	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	64 ns	3 µA @ 600 V	600 V	5A	175°C (Max)	1.35 V @ 5 A
MUR860J ULTRAFAST POWER DIODE WeEn Semiconductors	9,690	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	90 ns	10 µA @ 600 V	600 V	8A	175°C (Max)	1.25 V @ 8 A
BYW29E-100,127 DIODE GEN PURP 100V 8A TO220AC WeEn Semiconductors	2,832	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	25 ns	10 µA @ 100 V	100 V	8A	150°C (Max)	1.05 V @ 8 A
BYV29X-500,127 DIODE GEN PURP 500V 9A TO220FP WeEn Semiconductors	2,838	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 500 V	500 V	9A	150°C (Max)	1.25 V @ 8 A
BYW29EX-200,127 DIODE GEN PURP 200V 8A TO220FP WeEn Semiconductors	2,617	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	25 ns	10 µA @ 200 V	200 V	8A	150°C (Max)	1.05 V @ 8 A
BYT79-500,127 DIODE GEN PURP 500V 14A TO220AC WeEn Semiconductors	2,057	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 500 V	500 V	14A	150°C (Max)	1.38 V @ 30 A
BYC30X-600P,127 DIODE GEN PURP 600V 30A TO220F WeEn Semiconductors	3,780	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.8 V @ 30 A
BYV25G-600,127 DIODE GEN PURP 600V 5A I2PAK WeEn Semiconductors	2,764	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.3 V @ 5 A
BYV10X-600PQ DIODE GEN PURP 600V 10A TO220-2 WeEn Semiconductors	3,092	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 600 V	600 V	10A	175°C (Max)	2 V @ 10 A
BYV29G-600,127 DIODE GEN PURP 600V 9A I2PAK WeEn Semiconductors	2,732	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	9A	150°C (Max)	1.25 V @ 8 A
BYV29-400,127 DIODE GEN PURP 400V 9A TO220AC WeEn Semiconductors	3,094	-	RFQ	Fiche technique	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 400 V	400 V	9A	150°C (Max)	1.25 V @ 8 A