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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BYC58X-600,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	3,785	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	12.5 ns	150 µA @ 600 V	600 V	8A	150°C (Max)	3.2 V @ 8 A
BYC8X-600P,127 DIODE GEN PURP 600V 8A TO220FP WeEn Semiconductors	3,214	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	18 ns	20 µA @ 600 V	600 V	8A	175°C (Max)	1.9 V @ 8 A
BYC20X-600,127 DIODE GEN PURP 500V 20A TO220FP WeEn Semiconductors	3,803	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	200 µA @ 600 V	500 V	20A	150°C (Max)	2.9 V @ 20 A
BYC15X-600PQ DIODE GEN PURP 600V 15A TO220F WeEn Semiconductors	2,382	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	18 ns	10 µA @ 600 V	600 V	15A	175°C (Max)	3.2 V @ 15 A
BYV29-600,127 DIODE GEN PURP 600V 9A TO220AC WeEn Semiconductors	2,655	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	9A	150°C (Max)	1.25 V @ 8 A
BYR29-800,127 DIODE GEN PURP 800V 8A TO220AC WeEn Semiconductors	3,740	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 800 V	800 V	8A	150°C (Max)	1.5 V @ 8 A
BYW29E-150,127 DIODE GEN PURP 150V 8A TO220AC WeEn Semiconductors	2,999	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	25 ns	10 µA @ 150 V	150 V	8A	150°C (Max)	1.05 V @ 8 A
BYV29-500,127 DIODE GEN PURP 500V 9A TO220AC WeEn Semiconductors	4,999	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 500 V	500 V	9A	150°C (Max)	1.25 V @ 8 A
BYV29X-600,127 DIODE GEN PURP 600V 9A TO220FP WeEn Semiconductors	1,030	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	9A	150°C (Max)	1.26 V @ 8 A
NXPSC046506Q DIODE SCHOTTKY 650V 4A TO220AC WeEn Semiconductors	20,200	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
BYV25FD-600,118 DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors	7,500	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.9 V @ 5 A
BYV25D-600,118 DIODE GEN PURP 600V 5A DPAK WeEn Semiconductors	7,495	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.3 V @ 5 A
BYT79X-600,127 DIODE GEN PURP 600V 15A TO220F WeEn Semiconductors	4,451	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	60 ns	50 µA @ 600 V	600 V	15A	150°C (Max)	1.38 V @ 15 A
WNSC2D04650DJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	6,500	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	125pF @ 1V, 1MHz	0 ns	20 µA @ 650 V	650 V	4A	175°C	1.7 V @ 4 A
WNSC2D04650TJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,000	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	125pF @ 1V, 1MHz	0 ns	20 µA @ 650 V	650 V	4A	175°C	1.7 V @ 4 A
BYC8-600,127 DIODE GEN PURP 600V 8A TO220AC WeEn Semiconductors	4,986	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	52 ns	150 µA @ 600 V	600 V	8A	150°C (Max)	2.9 V @ 8 A
NXPSC04650B6J DIODE SCHOTTKY 650V 4A D2PAK WeEn Semiconductors	3,180	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
MURS160BJ ULTRAFAST POWER DIODE WeEn Semiconductors	7,616	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	5 µA @ 600 V	600 V	1A	175°C (Max)	1.25 V @ 1 A
BYC20DX-600PQ DIODE GEN PURP 600V 20A TO220F WeEn Semiconductors	4,992	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	20 ns	10 µA @ 600 V	600 V	20A	175°C (Max)	2.9 V @ 20 A
BYC10B-600,118 DIODE GEN PURP 500V 10A D2PAK WeEn Semiconductors	3,407	-	RFQ		Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	55 ns	200 µA @ 600 V	500 V	10A	150°C (Max)	2.9 V @ 10 A