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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
OB2051V OB2051/UNCASED/NO MARKCHIPS O WeEn Semiconductors*	3,843	-	RFQ		Tube	RoHS	-	-	Active	-	-	-	-	-	-	-	-
OB2052V OB2052/UNCASED/NO MARKCHIPS O WeEn Semiconductors*	3,556	-	RFQ		Tube	RoHS	-	-	Obsolete	-	-	-	-	-	-	-	-
WNSC6D06650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	3,000	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	327pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	6A	175°C	1.4 V @ 6 A
BYC30WT-600PQ DIODE GEN PURP 600V 30A TO247-3 WeEn Semiconductors	2,928	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	22 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	2.75 V @ 30 A
NXPSC106506Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors	3,000	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
NXPSC10650X6Q DIODE SCHOTTKY 650V 10A TO220F WeEn Semiconductors	3,000	-	RFQ	Fiche technique	Bulk	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
BYC75W-1200PQ STANDARD MARKING * HORIZONTAL, R WeEn Semiconductors	2,890	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	85 ns	250 µA @ 1200 V	1200 V	75A	175°C (Max)	-
NXPSC04650X6Q DIODE SCHOTTKY 650V 4A TO220F WeEn Semiconductors	2,998	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
BYC30-600P,127 DIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors	2,208	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.8 V @ 30 A
WNSC2D151200WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	1,900	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	700pF @ 1V, 1MHz	0 ns	150 µA @ 1200 V	1200 V	15A	175°C	1.7 V @ 15 A
NXPSC126506Q SILICON CARBIDE POWER DIODE WeEn Semiconductors	2,984	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	380pF @ 1V, 1MHz	0 ns	80 µA @ 650 V	650 V	12A	175°C (Max)	1.7 V @ 12 A
WNSC6D08650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	3,000	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	402pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	8A	175°C	1.4 V @ 8 A
WNSC2D10650XQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	2,995	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	310pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	10A	175°C	1.7 V @ 10 A
NXPSC16650B6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	3,196	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	534pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	16A	175°C (Max)	1.7 V @ 16 A
WNSC6D20650WQ SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	1,180	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1.2nF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	20A	175°C	1.4 V @ 20 A
WNSC10650WQ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	1,190	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	328pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	10A	175°C	1.7 V @ 10 A
NXPSC08650B6J DIODE SCHOTTKY 650V 8A D2PAK WeEn Semiconductors	3,175	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
NXPSC10650D6J DIODE SCHOTTKY 650V 10A DPAK WeEn Semiconductors	7,440	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
WNSC6D10650Q SILICON CARBIDE SCHOTTKY DIODE I WeEn Semiconductors	3,000	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	500pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	10A	175°C	1.4 V @ 10 A
BYC60W-600PQ DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	2,705	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 600 V	600 V	60A	175°C (Max)	2.6 V @ 60 A