Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
RF1S30P06SM

RF1S30P06SM

P-CHANNEL POWER MOSFET

Harris Corporation
2,624 -

RFQ

RF1S30P06SM

Fiche technique

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 30A - - - - - - - - - Surface Mount
RF1S540SM

RF1S540SM

N-CHANNEL POWER MOSFET

Harris Corporation
3,060 -

RFQ

RF1S540SM

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 28A (Tc) 10V 77mOhm @ 17A, 10V 4V @ 250µA 59 nC @ 10 V ±20V 1450 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RFM12P10

RFM12P10

P-CHANNEL POWER MOSFET

Harris Corporation
3,226 -

RFQ

RFM12P10

Fiche technique

Bulk - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 6A, 10V 4V @ 1mA - ±20V 1500 pF @ 25 V - 100W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFM12N10

RFM12N10

N-CHANNEL POWER MOSFET

Harris Corporation
3,072 -

RFQ

RFM12N10

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 200mOhm @ 12A, 10V 4V @ 250µA - ±20V 850 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP25N05L

RFP25N05L

N-CHANNEL, MOSFET

Harris Corporation
3,544 -

RFQ

RFP25N05L

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 25A (Tc) 4V, 5V 47mOhm @ 25A, 5V 2V @ 250µA 80 nC @ 10 V ±10V - - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
RFP2N18

RFP2N18

N-CHANNEL, MOSFET

Harris Corporation
3,000 -

RFQ

RFP2N18

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 180 V 2A (Tc) 10V 3.5Ohm @ 1A, 10V 4V @ 2mA - ±20V 200 pF @ 25 V - 25W (Tc) -55°C ~ 150°C (TJ) Through Hole
RLD03N06CLE

RLD03N06CLE

N-CHANNEL POWER MOSFET

Harris Corporation
3,890 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
RF1S30P05SM

RF1S30P05SM

P-CHANNEL POWER MOSFET

Harris Corporation
3,120 -

RFQ

RF1S30P05SM

Fiche technique

Bulk - Active P-Channel MOSFET (Metal Oxide) 50 V 30A - - - - - - - - - Surface Mount
RFB18N10CSVM

RFB18N10CSVM

N-CHANNEL POWER MOSFET

Harris Corporation
3,062 -

RFQ

RFB18N10CSVM

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 18A (Tc) 10V 100mOhm @ 9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V - - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
RFM15N05L

RFM15N05L

N-CHANNEL POWER MOSFET

Harris Corporation
3,201 -

RFQ

RFM15N05L

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) 5V 140mOhm @ 7.5A, 5V - - ±10V 900 pF @ 25 V - 75W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S30P06SM9A

RF1S30P06SM9A

P-CHANNEL POWER MOSFET

Harris Corporation
2,486 -

RFQ

RF1S30P06SM9A

Fiche technique

Bulk - Active P-Channel MOSFET (Metal Oxide) 60 V 30A (Tc) 10V 65mOhm @ 30A, 10V 4V @ 250µA 170 nC @ 20 V ±20V 3200 pF @ 25 V - 135W (Tc) -55°C ~ 175°C (TJ) Surface Mount
RF1S70N06

RF1S70N06

MOSFET N-CH 60V 70A I2PAK

Harris Corporation
2,510 -

RFQ

RF1S70N06

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 60 V 70A (Tc) - 14mOhm @ 70A, 10V 4V @ 250µA 215 nC @ 20 V ±20V 3000 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF610

IRF610

3.3A 200V 1.500 OHM N-CHANNEL

Harris Corporation
2,865 -

RFQ

IRF610

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 200 V 3.3A (Tc) 10V 1.5Ohm @ 2A, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75343S3

HUF75343S3

75 A, 55 V, 0.009 OHM, N-CHANNEL

Harris Corporation
2,159 -

RFQ

HUF75343S3

Fiche technique

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 9mOhm @ 75A, 10V 4V @ 250µA 205 nC @ 20 V ±20V 3000 pF @ 25 V - 270W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFU320

IRFU320

MOSFET N-CH 400V 3.1A TO251AA

Harris Corporation
3,179 -

RFQ

IRFU320

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.1A (Tc) - 1.8Ohm @ 1.9A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 350 pF @ 25 V - 2.5W (Ta), 42W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9620

IRF9620

3.5A, 200V, 1.500 OHM, P-CHANNEL

Harris Corporation
2,192 -

RFQ

IRF9620

Fiche technique

Bulk - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 40W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF730

IRF730

N-CHANNEL, MOSFET

Harris Corporation
3,653 -

RFQ

IRF730

Fiche technique

Bulk PowerMESH™ II Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3A, 10V 4V @ 250µA 24 nC @ 10 V ±20V 530 pF @ 25 V - 100W (Tc) 150°C (TJ) Through Hole
IRF710

IRF710

PFET, 2A I(D), 400V, 3.6OHM, 1-E

Harris Corporation
2,800 -

RFQ

IRF710

Fiche technique

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 135 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUF75333S3

HUF75333S3

MOSFET N-CH 55V 66A D2PAK

Harris Corporation
2,684 -

RFQ

HUF75333S3

Fiche technique

Bulk UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 66A (Tc) - 16mOhm @ 66A, 10V 4V @ 250µA 85 nC @ 20 V ±20V 1300 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
HUF76122P3

HUF76122P3

HUF76122P3

Harris Corporation
2,879 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
Total 395 Record«Prev1... 1112131415161718...20Next»
1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur