GeneSiC Semiconductor G3R75MT12D

Numéro de pièce
G3R75MT12D
Fabricant
GeneSiC Semiconductor
Catégorie :
Transistoren – FETs, MOSFETs – Einzeltransistoren
Emballage
TO-247-3
Fiche technique
Fudong Communication (Shenzhen) Group Co., Ltd.G3R75MT12D.pdf
Description
SIC MOSFET N-CH 41A TO247-3
Quantité

Prix unitaire$0

Prix total$0

Paiement
payment
Expédition
payment

Product details

1. How to order G3R75MT12D on Fudong Communication (Shenzhen) Group Co., Ltd.?

Currently, Fudong Communication (Shenzhen) Group Co., Ltd. only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does Fudong Communication (Shenzhen) Group Co., Ltd. guarantee that G3R75MT12D is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the G3R75MT12D. All suppliers must pass our qualification reviews before they can publish their products including G3R75MT12D on Fudong Communication (Shenzhen) Group Co., Ltd.; we pay more attention to the channels and quality of G3R75MT12D products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the G3R75MT12D price and inventory displayed accurate?

The price and inventory of G3R75MT12D fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of G3R75MT12D?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the G3R75MT12D we delivered, we will accept the replacement or return of the G3R75MT12D only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of G3R75MT12D.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as G3R75MT12D pin diagram, G3R75MT12D datasheet?

If you need any after-sales service, please do not hesitate to contact us.

Image G3R350MT12D G3R160MT12D G3R75MT12D G3R60MT07D G3R60MT07J
Numéro de pièce G3R350MT12D G3R160MT12D G3R75MT12D G3R60MT07D G3R60MT07J
Fabricant GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor
Packaging Tube Tube Tube Tube Tube
Series G3R™ G3R™ G3R™ G3R™ G3R™
ProductStatus Active Active Active Active Active
FETType N-Channel N-Channel N-Channel N-Channel N-Channel
Technology SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide) SiCFET (Silicon Carbide)
DraintoSourceVoltage(Vdss) 1200 V 1200 V 1200 V 1200 V 1200 V
Current-ContinuousDrain(Id)@25°C 41A (Tc) 41A (Tc) 41A (Tc) 41A (Tc) 41A (Tc)
DriveVoltage(MaxRdsOnMinRdsOn) 15V 15V 15V 15V 15V
RdsOn(Max)@IdVgs 90mOhm @ 20A, 15V 90mOhm @ 20A, 15V 90mOhm @ 20A, 15V 90mOhm @ 20A, 15V 90mOhm @ 20A, 15V
Vgs(th)(Max)@Id 2.69V @ 7.5mA 2.69V @ 7.5mA 2.69V @ 7.5mA 2.69V @ 7.5mA 2.69V @ 7.5mA
GateCharge(Qg)(Max)@Vgs 54 nC @ 15 V 54 nC @ 15 V 54 nC @ 15 V 54 nC @ 15 V 54 nC @ 15 V
Vgs(Max) ±15V ±15V ±15V ±15V ±15V
InputCapacitance(Ciss)(Max)@Vds 1560 pF @ 800 V 1560 pF @ 800 V 1560 pF @ 800 V 1560 pF @ 800 V 1560 pF @ 800 V
FETFeature - - - - -
PowerDissipation(Max) 207W (Tc) 207W (Tc) 207W (Tc) 207W (Tc) 207W (Tc)
OperatingTemperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
MountingType Through Hole Through Hole Through Hole Through Hole Through Hole

G3R75MT12D Informations pertinentes

Inclut les pièces suivantes "G3R75MT12D" ISSI, solutions de silicium intégrées de lentreprise G3R75MT12D.

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