Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9410TR

IRF9410TR

MOSFET N-CH 30V 7A 8SO

Infineon Technologies
3,678 -

RFQ

IRF9410TR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 7A (Ta) 4.5V, 10V 30mOhm @ 7A, 10V 1V @ 250µA 27 nC @ 10 V ±20V 550 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9520NSTRL

IRF9520NSTRL

MOSFET P-CH 100V 6.8A D2PAK

Infineon Technologies
2,683 -

RFQ

IRF9520NSTRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9520NSTRR

IRF9520NSTRR

MOSFET P-CH 100V 6.8A D2PAK

Infineon Technologies
2,104 -

RFQ

IRF9520NSTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 6.8A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9530NSTRR

IRF9530NSTRR

MOSFET P-CH 100V 14A D2PAK

Infineon Technologies
2,824 -

RFQ

IRF9530NSTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540NSTRR

IRF9540NSTRR

MOSFET P-CH 100V 23A D2PAK

Infineon Technologies
3,116 -

RFQ

IRF9540NSTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL1006TR

IRFL1006TR

MOSFET N-CH 60V 1.6A SOT223

Infineon Technologies
2,772 -

RFQ

IRFL1006TR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 220mOhm @ 1.6A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 160 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z24NSTRL

IRF9Z24NSTRL

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
2,847 -

RFQ

IRF9Z24NSTRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24NSTRR

IRF9Z24NSTRR

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
3,850 -

RFQ

IRF9Z24NSTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z34NSTRR

IRF9Z34NSTRR

MOSFET P-CH 55V 19A D2PAK

Infineon Technologies
2,006 -

RFQ

IRF9Z34NSTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBL3315

IRFBL3315

MOSFET N-CH 150V 21A SUPER D2PAK

Infineon Technologies
2,092 -

RFQ

IRFBL3315

Fiche technique

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 150 V 21A (Ta) - - - - - - - - - Surface Mount
IRFI2807

IRFI2807

MOSFET N-CH 75V 40A TO220AB FP

Infineon Technologies
3,015 -

RFQ

IRFI2807

Fiche technique

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 40A (Tc) 10V 13mOhm @ 43A, 10V 4V @ 250µA 150 nC @ 10 V ±20V 3400 pF @ 25 V - 48W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI4905

IRFI4905

MOSFET P-CH 55V 41A TO220AB FP

Infineon Technologies
2,797 -

RFQ

IRFI4905

Fiche technique

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 41A (Tc) 10V 20mOhm @ 22A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 3400 pF @ 25 V - 63W (Tc) - Through Hole
IRFI9530N

IRFI9530N

MOSFET P-CH 100V 7.7A TO220AB FP

Infineon Technologies
2,065 -

RFQ

IRFI9530N

Fiche technique

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 7.7A (Ta) - 300mOhm @ 4.6A, 10V 4V @ 250µA 38 nC @ 10 V - 860 pF @ 25 V - - - Through Hole
IRFI9Z24N

IRFI9Z24N

MOSFET P-CH 55V 9.5A TO220AB FP

Infineon Technologies
2,635 -

RFQ

IRFI9Z24N

Fiche technique

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 9.5A (Tc) 10V 175mOhm @ 5.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 29W (Tc) - Through Hole
IRFI9Z34N

IRFI9Z34N

MOSFET P-CH 55V 14A TO220AB FP

Infineon Technologies
2,118 -

RFQ

IRFI9Z34N

Fiche technique

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 10V 100mOhm @ 7.8A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 37W (Tc) - Through Hole
IRFL024NTR

IRFL024NTR

MOSFET N-CH 55V 2.8A SOT223

Infineon Technologies
3,289 -

RFQ

IRFL024NTR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 2.8A (Ta) 10V 75mOhm @ 2.8A, 10V 4V @ 250µA 18.3 nC @ 10 V ±20V 400 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFR024NTRR

IRFR024NTRR

MOSFET N-CH 55V 17A DPAK

Infineon Technologies
2,953 -

RFQ

IRFR024NTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 17A (Tc) 10V 75mOhm @ 10A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 370 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1205TRL

IRFR1205TRL

MOSFET N-CH 55V 44A DPAK

Infineon Technologies
2,594 -

RFQ

IRFR1205TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR1205TRR

IRFR1205TRR

MOSFET N-CH 55V 44A DPAK

Infineon Technologies
3,254 -

RFQ

IRFR1205TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 44A (Tc) 10V 27mOhm @ 26A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1300 pF @ 25 V - 107W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR13N20DTRL

IRFR13N20DTRL

MOSFET N-CH 200V 13A DPAK

Infineon Technologies
2,688 -

RFQ

IRFR13N20DTRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) 10V 235mOhm @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 830 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

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Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

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