Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFR13N20DTR

IRFR13N20DTR

MOSFET N-CH 200V 13A DPAK

Infineon Technologies
3,968 -

RFQ

IRFR13N20DTR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) 10V 235mOhm @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 830 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR13N20DTRR

IRFR13N20DTRR

MOSFET N-CH 200V 13A DPAK

Infineon Technologies
3,776 -

RFQ

IRFR13N20DTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13A (Tc) 10V 235mOhm @ 8A, 10V 5.5V @ 250µA 38 nC @ 10 V ±30V 830 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR18N15DTRL

IRFR18N15DTRL

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
2,976 -

RFQ

IRFR18N15DTRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR18N15DTR

IRFR18N15DTR

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
3,552 -

RFQ

IRFR18N15DTR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR18N15DTRR

IRFR18N15DTRR

MOSFET N-CH 150V 18A DPAK

Infineon Technologies
2,832 -

RFQ

IRFR18N15DTRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 18A (Tc) 10V 125mOhm @ 11A, 10V 5.5V @ 250µA 43 nC @ 10 V ±30V 900 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR2605

IRFR2605

MOSFET N-CH 55V 19A D-PAK

Infineon Technologies
3,760 -

RFQ

IRFR2605

Fiche technique

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 85mOhm @ 11A, 10V 4V @ 250µA 23 nC @ 10 V ±20V 420 pF @ 25 V - 50W (Tc) - Surface Mount
IRFR3103

IRFR3103

MOSFET N-CH 400V 1.7A DPAK

Infineon Technologies
3,401 -

RFQ

IRFR3103

Fiche technique

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Ta) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) - Surface Mount
IRFR3103TRL

IRFR3103TRL

MOSFET N-CH 400V 1.7A DPAK

Infineon Technologies
3,728 -

RFQ

IRFR3103TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Ta) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) - Surface Mount
IRFR3103TR

IRFR3103TR

MOSFET N-CH 400V 1.7A DPAK

Infineon Technologies
2,436 -

RFQ

IRFR3103TR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Ta) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) - Surface Mount
IRFR3103TRR

IRFR3103TRR

MOSFET N-CH 400V 1.7A DPAK

Infineon Technologies
2,997 -

RFQ

IRFR3103TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 400 V 1.7A (Ta) 10V 3.6Ohm @ 1A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 170 pF @ 25 V - 2.5W (Ta), 25W (Tc) - Surface Mount
IRFR3303TRL

IRFR3303TRL

MOSFET N-CH 30V 33A DPAK

Infineon Technologies
3,597 -

RFQ

IRFR3303TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3303TRR

IRFR3303TRR

MOSFET N-CH 30V 33A DPAK

Infineon Technologies
3,550 -

RFQ

IRFR3303TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 33A (Tc) 10V 31mOhm @ 18A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 750 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR3910TRR

IRFR3910TRR

MOSFET N-CH 100V 16A DPAK

Infineon Technologies
2,959 -

RFQ

IRFR3910TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 16A (Tc) 10V 115mOhm @ 10A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 640 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4105TRL

IRFR4105TRL

MOSFET N-CH 55V 27A DPAK

Infineon Technologies
2,146 -

RFQ

IRFR4105TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4105TR

IRFR4105TR

MOSFET N-CH 55V 27A DPAK

Infineon Technologies
3,853 -

RFQ

IRFR4105TR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR4105TRR

IRFR4105TRR

MOSFET N-CH 55V 27A DPAK

Infineon Technologies
2,825 -

RFQ

IRFR4105TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 27A (Tc) 10V 45mOhm @ 16A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 700 pF @ 25 V - 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305TRL

IRFR5305TRL

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
2,087 -

RFQ

IRFR5305TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5305TRR

IRFR5305TRR

MOSFET P-CH 55V 31A DPAK

Infineon Technologies
3,365 -

RFQ

IRFR5305TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 31A (Tc) 10V 65mOhm @ 16A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1200 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFR5505TRL

IRFR5505TRL

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,564 -

RFQ

IRFR5505TRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR5505TRR

IRFR5505TRR

MOSFET P-CH 55V 18A DPAK

Infineon Technologies
2,723 -

RFQ

IRFR5505TRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 18A (Tc) 10V 110mOhm @ 9.6A, 10V 4V @ 250µA 32 nC @ 10 V ±20V 650 pF @ 25 V - 57W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

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