Transistors - FET, MOSFET - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPA11N65C3XKSA1

SPA11N65C3XKSA1

MOSFET N-CH 650V 11A TO220-FP

Infineon Technologies
3,650 -

RFQ

SPA11N65C3XKSA1

Fiche technique

Tube CoolMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 650 V 11A (Tc) 10V 380mOhm @ 7A, 10V 3.9V @ 500µA 60 nC @ 10 V ±20V 1200 pF @ 25 V - 33W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI20N60CFD

SPI20N60CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
168 -

RFQ

SPI20N60CFD

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
BTS130-E3045A

BTS130-E3045A

N-CHANNEL POWER MOSFET

Infineon Technologies
814 -

RFQ

BTS130-E3045A

Fiche technique

Bulk * Obsolete - - - - - - - - - - - - - -
IPI65R190C

IPI65R190C

N-CHANNEL POWER MOSFET

Infineon Technologies
500 -

RFQ

IPI65R190C

Fiche technique

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 650 V 20.2A (Tc) 10V 190mOhm @ 7.3A, 10V 3.5V @ 730µA 73 nC @ 10 V ±20V 1620 pF @ 100 V - 151W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP50R199CPXK

IPP50R199CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
217 -

RFQ

IPP50R199CPXK

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
SPB11N60C2

SPB11N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies
300 -

RFQ

SPB11N60C2

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IPB80N04S2H4-ATMA2

IPB80N04S2H4-ATMA2

N-CHANNEL POWER MOSFET

Infineon Technologies
161 -

RFQ

IPB80N04S2H4-ATMA2

Fiche technique

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPA030N10NF2SXKSA1

IPA030N10NF2SXKSA1

TRENCH >=100V PG-TO220-3

Infineon Technologies
3,687 -

RFQ

IPA030N10NF2SXKSA1

Fiche technique

Tube StrongIRFET™ 2 Active N-Channel MOSFET (Metal Oxide) 100 V 83A (Tc) 6V, 10V 3mOhm @ 50A, 10V 3.8V @ 169µA 154 nC @ 10 V ±20V 7300 pF @ 50 V - 41W (Tc) -55°C ~ 175°C (TJ) Through Hole
SPB160N04S2-03

SPB160N04S2-03

160A, 40V N-CHANNEL, MOSFET

Infineon Technologies
393 -

RFQ

SPB160N04S2-03

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
BUZ331

BUZ331

N-CHANNEL POWER MOSFET

Infineon Technologies
215 -

RFQ

BUZ331

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IPI65R110CFD

IPI65R110CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
430 -

RFQ

IPI65R110CFD

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
IPA60R165CP

IPA60R165CP

MOSFET N-CH 600V 21A TO220

Infineon Technologies
300 -

RFQ

IPA60R165CP

Fiche technique

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 21A (Tc) - 165mOhm @ 12A, 10V 3.5V @ 790µA 52 nC @ 10 V ±20V 2000 pF @ 100 V - 34W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB08N03L

SPB08N03L

N-CHANNEL POWER MOSFET

Infineon Technologies
1,000 -

RFQ

SPB08N03L

Fiche technique

Bulk - Active - - - - - - - - - - - - - -
BTS112AE3045ANTMA1

BTS112AE3045ANTMA1

N-CHANNEL POWER MOSFET

Infineon Technologies
300 -

RFQ

BTS112AE3045ANTMA1

Fiche technique

Bulk * Obsolete - - - - - - - - - - - - - -
IPA075N15N3

IPA075N15N3

N-CHANNEL POWER MOSFET

Infineon Technologies
491 -

RFQ

IPA075N15N3

Fiche technique

Bulk * Active - - - - - - - - - - - - - -
BTS132

BTS132

N-CHANNEL POWER MOSFET

Infineon Technologies
232 -

RFQ

BTS132

Fiche technique

Bulk * Obsolete - - - - - - - - - - - - - -
IRF3415STRR

IRF3415STRR

MOSFET N-CH 150V 43A D2PAK

Infineon Technologies
2,014 -

RFQ

IRF3415STRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 43A (Tc) 10V 42mOhm @ 22A, 10V 4V @ 250µA 200 nC @ 10 V ±20V 2400 pF @ 25 V - 3.8W (Ta), 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515STRL

IRF3515STRL

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,846 -

RFQ

IRF3515STRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3515STRR

IRF3515STRR

MOSFET N-CH 150V 41A D2PAK

Infineon Technologies
3,188 -

RFQ

IRF3515STRR

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 41A (Tc) 10V 45mOhm @ 25A, 10V 4.5V @ 250µA 107 nC @ 10 V ±30V 2260 pF @ 25 V - 200W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF3704STRL

IRF3704STRL

MOSFET N-CH 20V 77A D2PAK

Infineon Technologies
2,401 -

RFQ

IRF3704STRL

Fiche technique

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 77A (Tc) 4.5V, 10V 9mOhm @ 15A, 10V 3V @ 250µA 19 nC @ 4.5 V ±20V 1996 pF @ 10 V - 87W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

Accueil

Fudong Communication (Shenzhen) Group Co., Ltd.

Produit

Fudong Communication (Shenzhen) Group Co., Ltd.

Téléphone

Fudong Communication (Shenzhen) Group Co., Ltd.

Utilisateur