Plus de catégories de produits

Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BYV10EX-600PQ DIODE GEN PURP 600V 10A TO220F WeEn Semiconductors	3,351	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	10 µA @ 600 V	600 V	10A	-65°C ~ 175°C	2 V @ 10 A
BYR29X-800,127 DIODE GEN PURP 800V 8A TO220F WeEn Semiconductors	2,401	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 800 V	800 V	8A	150°C (Max)	1.7 V @ 8 A
NUR460P,133 DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors	2,223	-	RFQ	Fiche technique	Tape & Box (TB)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	75 ns	10 µA @ 600 V	600 V	4A	175°C (Max)	1.05 V @ 3 A
NUR460P/L01U DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors	2,388	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	75 ns	10 µA @ 600 V	600 V	4A	175°C (Max)	1.05 V @ 3 A
NUR460P/L02U DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors	3,562	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	75 ns	10 µA @ 600 V	600 V	4A	175°C (Max)	1.05 V @ 3 A
NUR460P/L03U DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors	3,742	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	75 ns	10 µA @ 600 V	600 V	4A	175°C (Max)	1.05 V @ 3 A
NUR460P/L04U DIODE GEN PURP 600V 4A DO201AD WeEn Semiconductors	3,824	-	RFQ	Fiche technique	Bulk	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Through Hole	-	75 ns	10 µA @ 600 V	600 V	4A	175°C (Max)	1.05 V @ 3 A
WND08P16DJ STANDARD POWER DIODE WeEn Semiconductors	2,436	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	50 µA @ 1600 V	1600 V	8A	150°C	1.25 V @ 8 A
NURS360BJ DIODE GEN PURP 600V 3A SOD132 WeEn Semiconductors	3,956	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Obsolete	Surface Mount	-	75 ns	-	600 V	3A	175°C (Max)	1 V @ 3 A
BYC10-600PQ DIODE GEN PURP 600V 10A TO220AC WeEn Semiconductors	2,383	-	RFQ		Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	19 ns	-	600 V	10A	150°C (Max)	1.8 V @ 10 A
BYC10X-600PQ DIODE GEN PURP 600V 10A TO220F WeEn Semiconductors	3,597	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	40 ns	200 µA @ 600 V	600 V	10A	150°C (Max)	2.9 V @ 10 A
BYV10MX-600PQ ULTRAFAST POWER DIODE IN 2-LEADS WeEn Semiconductors	2,051	-	RFQ		Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	10 µA @ 600 V	600 V	10A	175°C	2 V @ 10 A
BYV10ED-600PJ DIODE GEN PURP 600V 10A DPAK WeEn Semiconductors	2,389	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	10 µA @ 600 V	600 V	10A	175°C (Max)	2 V @ 10 A
NXPSC08650Q DIODE SCHOTTKY 650V 8A TO220AC WeEn Semiconductors	3,263	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	260pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
NXPSC20650Q DIODE SCHOTTKY 650V 20A TO220AC WeEn Semiconductors	2,312	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	600pF @ 1V, 1MHz	0 ns	500 µA @ 650 V	650 V	20A	175°C (Max)	1.7 V @ 20 A
WNSC2D06650DJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,938	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	198pF @ 1V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A	175°C	1.7 V @ 6 A
WNSC2D08650DJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	3,614	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	260pF @ 1V, 1MHz	0 ns	40 µA @ 650 V	650 V	8A	175°C	1.7 V @ 8 A
BYV60W-600PQ DIODE GEN PURP 600V 60A TO247-2 WeEn Semiconductors	2,774	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	10 µA @ 600 V	600 V	60A	175°C (Max)	2 V @ 60 A
NXPSC166506Q SILICON CARBIDE POWER DIODE WeEn Semiconductors	2,832	-	RFQ		Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	534pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	16A	175°C (Max)	1.7 V @ 16 A
MURS360BJ ULTRAFAST POWER DIODE WeEn Semiconductors	2,992	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	50 ns	3 µA @ 600 V	600 V	3A	175°C (Max)	1.3 V @ 3 A