Diodes - Redresseurs - Simples

Photo : Numéro de pièce du fabricant Disponibilité en stock Prix Quantité Fiche technique Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
BYV10EX-600PQ

BYV10EX-600PQ

DIODE GEN PURP 600V 10A TO220F

WeEn Semiconductors
3,351 -

RFQ

BYV10EX-600PQ

Fiche technique

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 10 µA @ 600 V 600 V 10A -65°C ~ 175°C 2 V @ 10 A
BYR29X-800,127

BYR29X-800,127

DIODE GEN PURP 800V 8A TO220F

WeEn Semiconductors
2,401 -

RFQ

BYR29X-800,127

Fiche technique

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 800 V 800 V 8A 150°C (Max) 1.7 V @ 8 A
NUR460P,133

NUR460P,133

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors
2,223 -

RFQ

NUR460P,133

Fiche technique

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A 175°C (Max) 1.05 V @ 3 A
NUR460P/L01U

NUR460P/L01U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors
2,388 -

RFQ

NUR460P/L01U

Fiche technique

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A 175°C (Max) 1.05 V @ 3 A
NUR460P/L02U

NUR460P/L02U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors
3,562 -

RFQ

NUR460P/L02U

Fiche technique

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A 175°C (Max) 1.05 V @ 3 A
NUR460P/L03U

NUR460P/L03U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors
3,742 -

RFQ

NUR460P/L03U

Fiche technique

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A 175°C (Max) 1.05 V @ 3 A
NUR460P/L04U

NUR460P/L04U

DIODE GEN PURP 600V 4A DO201AD

WeEn Semiconductors
3,824 -

RFQ

NUR460P/L04U

Fiche technique

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 75 ns 10 µA @ 600 V 600 V 4A 175°C (Max) 1.05 V @ 3 A
WND08P16DJ

WND08P16DJ

STANDARD POWER DIODE

WeEn Semiconductors
2,436 -

RFQ

WND08P16DJ

Fiche technique

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1600 V 1600 V 8A 150°C 1.25 V @ 8 A
NURS360BJ

NURS360BJ

DIODE GEN PURP 600V 3A SOD132

WeEn Semiconductors
3,956 -

RFQ

NURS360BJ

Fiche technique

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount - 75 ns - 600 V 3A 175°C (Max) 1 V @ 3 A
BYC10-600PQ

BYC10-600PQ

DIODE GEN PURP 600V 10A TO220AC

WeEn Semiconductors
2,383 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 19 ns - 600 V 10A 150°C (Max) 1.8 V @ 10 A
BYC10X-600PQ

BYC10X-600PQ

DIODE GEN PURP 600V 10A TO220F

WeEn Semiconductors
3,597 -

RFQ

BYC10X-600PQ

Fiche technique

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 200 µA @ 600 V 600 V 10A 150°C (Max) 2.9 V @ 10 A
BYV10MX-600PQ

BYV10MX-600PQ

ULTRAFAST POWER DIODE IN 2-LEADS

WeEn Semiconductors
2,051 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 10 µA @ 600 V 600 V 10A 175°C 2 V @ 10 A
BYV10ED-600PJ

BYV10ED-600PJ

DIODE GEN PURP 600V 10A DPAK

WeEn Semiconductors
2,389 -

RFQ

BYV10ED-600PJ

Fiche technique

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 10 µA @ 600 V 600 V 10A 175°C (Max) 2 V @ 10 A
NXPSC08650Q

NXPSC08650Q

DIODE SCHOTTKY 650V 8A TO220AC

WeEn Semiconductors
3,263 -

RFQ

NXPSC08650Q

Fiche technique

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 260pF @ 1V, 1MHz 0 ns 230 µA @ 650 V 650 V 8A 175°C (Max) 1.7 V @ 8 A
NXPSC20650Q

NXPSC20650Q

DIODE SCHOTTKY 650V 20A TO220AC

WeEn Semiconductors
2,312 -

RFQ

NXPSC20650Q

Fiche technique

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Discontinued at Digi-Key Through Hole 600pF @ 1V, 1MHz 0 ns 500 µA @ 650 V 650 V 20A 175°C (Max) 1.7 V @ 20 A
WNSC2D06650DJ

WNSC2D06650DJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
3,938 -

RFQ

WNSC2D06650DJ

Fiche technique

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 198pF @ 1V, 1MHz 0 ns 30 µA @ 650 V 650 V 6A 175°C 1.7 V @ 6 A
WNSC2D08650DJ

WNSC2D08650DJ

SILICON CARBIDE SCHOTTKY DIODE

WeEn Semiconductors
3,614 -

RFQ

WNSC2D08650DJ

Fiche technique

Tape & Reel (TR),Cut Tape (CT) RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 260pF @ 1V, 1MHz 0 ns 40 µA @ 650 V 650 V 8A 175°C 1.7 V @ 8 A
BYV60W-600PQ

BYV60W-600PQ

DIODE GEN PURP 600V 60A TO247-2

WeEn Semiconductors
2,774 -

RFQ

BYV60W-600PQ

Fiche technique

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 55 ns 10 µA @ 600 V 600 V 60A 175°C (Max) 2 V @ 60 A
NXPSC166506Q

NXPSC166506Q

SILICON CARBIDE POWER DIODE

WeEn Semiconductors
2,832 -

RFQ

Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 534pF @ 1V, 1MHz 0 ns 100 µA @ 650 V 650 V 16A 175°C (Max) 1.7 V @ 16 A
MURS360BJ

MURS360BJ

ULTRAFAST POWER DIODE

WeEn Semiconductors
2,992 -

RFQ

MURS360BJ

Fiche technique

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 50 ns 3 µA @ 600 V 600 V 3A 175°C (Max) 1.3 V @ 3 A
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1500+
1500+ Moyenne quotidienne des demandes de devis (RFQ)
20,000.000
20,000.000 Unité standard du produit
1800+
1800+ Fabricants du monde entier
15,000+
15,000+ Stock disponible
Fudong Communication (Shenzhen) Group Co., Ltd.

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