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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
OB2003/001V OB2003/001V/NAU000/NO MARKCHIPS WeEn Semiconductors*	3,138	-	RFQ		Tube	RoHS	-	-	Active	-	-	-	-	-	-	-	-
WNSC08650T6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	2,976	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	267pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	8A	175°C (Max)	1.7 V @ 8 A
NXPSC06650Q DIODE SCHOTTKY 650V 6A TO220AC WeEn Semiconductors	1,998	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A
BYV29FX-600,127 DIODE GEN PURP 600V 9A TO220FP WeEn Semiconductors	245	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	50 µA @ 600 V	600 V	9A	150°C (Max)	1.9 V @ 8 A
NXPLQSC10650Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors	923	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	250pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	10A	175°C (Max)	1.85 V @ 10 A
WNSC10650T6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	2,940	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	328pF @ 1V, 1MHz	0 ns	60 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
NXPSC10650Q DIODE SCHOTTKY 650V 10A TO220AC WeEn Semiconductors	1,943	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	10A	175°C (Max)	1.7 V @ 10 A
WNSC051200Q SILICON CARBIDE POWER DIODE WeEn Semiconductors	2,980	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	5A	175°C (Max)	1.6 V @ 5 A
WNSC101200Q SILICON CARBIDE POWER DIODE WeEn Semiconductors	2,435	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 10 A
WNSC101200WQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	1,200	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 10 A
BYV25F-600,127 DIODE GEN PURP 600V 5A TO220AC WeEn Semiconductors	3,074	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.9 V @ 5 A
BYV25FX-600,127 DIODE GEN PURP 600V 5A TO220FP WeEn Semiconductors	2,093	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	35 ns	50 µA @ 600 V	600 V	5A	150°C (Max)	1.9 V @ 5 A
BYC20-600,127 DIODE GEN PURP 500V 20A TO220AC WeEn Semiconductors	5,415	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	55 ns	200 µA @ 600 V	500 V	20A	150°C (Max)	2.9 V @ 20 A
WNSC101200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	480	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	250pF @ 1V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A	175°C (Max)	1.6 V @ 5 A
WNSC2D06650TJ SILICON CARBIDE SCHOTTKY DIODE WeEn Semiconductors	2,994	-	RFQ	Fiche technique	Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	198pF @ 1V, 1MHz	0 ns	30 µA @ 650 V	650 V	6A	175°C	1.7 V @ 6 A
WNSC04650T6J SILICON CARBIDE POWER DIODE WeEn Semiconductors	1,943	-	RFQ		Tape & Reel (TR),Cut Tape (CT)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	141pF @ 1V, 1MHz	0 ns	25 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
WNSC201200WQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	1,179	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	1.02nF @ 1V, 1MHz	0 ns	220 µA @ 1200 V	1200 V	20A	175°C (Max)	1.6 V @ 20 A
WNSC201200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	476	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	510pF @ 1V, 1MHz	0 ns	110 µA @ 1200 V	1200 V	20A	175°C (Max)	1.6 V @ 10 A
NXPSC04650Q DIODE SCHOTTKY 650V 4A TO220AC WeEn Semiconductors	2,000	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
WNSC401200CWQ SILICON CARBIDE POWER DIODE WeEn Semiconductors	480	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	810pF @ 1V, 1MHz	0 ns	200 µA @ 1200 V	1200 V	40A	175°C (Max)	1.75 V @ 20 A