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Diodes - Redresseurs - Simples

Numéro de pièce du fabricant	Disponibilité en stock	Prix	Quantité	Fiche technique	Packaging	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
BYV29-600PQ DIODE GEN PURP 600V 9A TO220AB WeEn Semiconductors	2,902	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	9A	175°C (Max)	1.3 V @ 8 A
BYV29B-600PJ DIODE GEN PURP 600V 9A D2PAK WeEn Semiconductors	3,719	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 600 V	600 V	9A	175°C (Max)	1.3 V @ 8 A
BYV29G-600PQ DIODE GEN PURP 600V 9A I2PAK WeEn Semiconductors	3,105	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	9A	175°C (Max)	1.3 V @ 8 A
BYV29X-600PQ DIODE GEN PURP 600V 9A TO220F WeEn Semiconductors	3,464	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	9A	175°C (Max)	1.3 V @ 8 A
BYC30W-1200PQ DIODE GEN PURP 1.2KV 30A TO247-2 WeEn Semiconductors	3,037	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	250 µA @ 1200 V	1200 V	30A	175°C (Max)	3.3 V @ 30 A
SK8DJ DIODE GEN PURP 800V 8A DPAK WeEn Semiconductors	3,480	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	50 µA @ 800 V	800 V	8A	150°C (Max)	1.1 V @ 8 A
BYC30B-600PJ DIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors	2,922	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	35 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	2.75 V @ 30 A
BYV30-600PQ DIODE GEN PURP 600V 30A TO220AC WeEn Semiconductors	3,946	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
BYV30B-600PJ DIODE GEN PURP 600V 30A D2PAK WeEn Semiconductors	3,841	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
BYV30JT-600PQ DIODE GEN PURP 600V 30A TO-3P WeEn Semiconductors	3,752	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.8 V @ 30 A
BYV30W-600PQ DIODE GEN PURP 600V 30A TO247-2 WeEn Semiconductors	3,695	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
BYC30-1200PQ DIODE GEN PURP 1.2KV 30A TO220AC WeEn Semiconductors	3,808	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	65 ns	250 µA @ 1200 V	1200 V	30A	175°C (Max)	3.3 V @ 30 A
BYV30X-600PQ DIODE GEN PURP 600V 30A TO220F WeEn Semiconductors	2,429	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	75 ns	10 µA @ 600 V	600 V	30A	175°C (Max)	1.55 V @ 30 A
BYC5-1200PQ DIODE GEN PURP 1.2KV 5A TO220AC WeEn Semiconductors	2,339	-	RFQ	Fiche technique	Tube	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	36 ns	100 µA @ 1200 V	1200 V	5A	175°C (Max)	3.2 V @ 5 A
NXPLQSC20650WQ NXPLQSC20650WQ TO-247 STANDARD WeEn Semiconductors	3,899	-	RFQ	Fiche technique	Bulk	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	250pF @ 1V, 1MHz	0 ns	230 µA @ 650 V	650 V	20A	175°C (Max)	1.85 V @ 10 A
BYT79B-600PJ DIODE GEN PURP 600V 15A D2PAK WeEn Semiconductors	2,889	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	60 ns	10 µA @ 600 V	600 V	15A	175°C (Max)	1.38 V @ 15 A
NXPLQSC30650WQ NXPLQSC30650WQ TO-247 STANDARD WeEn Semiconductors	2,308	-	RFQ	Fiche technique	Bulk	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	300pF @ 1V, 1MHz	0 ns	250 µA @ 650 V	650 V	30A	175°C (Max)	1.95 V @ 15 A
NXPSC04650BJ DIODE SCHOTTKY 650V 4A D2PAK WeEn Semiconductors	2,812	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Surface Mount	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
NXPSC04650XQ DIODE SCHOTTKY 650V 4A TO220F WeEn Semiconductors	2,241	-	RFQ	Fiche technique	Tube	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Through Hole	130pF @ 1V, 1MHz	0 ns	170 µA @ 650 V	650 V	4A	175°C (Max)	1.7 V @ 4 A
NXPSC06650BJ DIODE SCHOTTKY 650V 6A D2PAK WeEn Semiconductors	3,819	-	RFQ	Fiche technique	Tape & Reel (TR)	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Discontinued at Digi-Key	Surface Mount	190pF @ 1V, 1MHz	0 ns	200 µA @ 650 V	650 V	6A	175°C (Max)	1.7 V @ 6 A